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Vertically Aligned Carbon Nanotube Microbundle Arrays for Field-Emission Applications
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-07-10 00:00:00 , DOI: 10.1021/acsanm.0c01280 Xuyao Tang 1 , Hongxin Yue 1 , Lin Liu 1 , Jie Luo 1 , Xiaoling Wu 1 , Ruiting Zheng 1 , Guoan Cheng 1
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-07-10 00:00:00 , DOI: 10.1021/acsanm.0c01280 Xuyao Tang 1 , Hongxin Yue 1 , Lin Liu 1 , Jie Luo 1 , Xiaoling Wu 1 , Ruiting Zheng 1 , Guoan Cheng 1
Affiliation
The fabrication, properties, and applications of vertically aligned carbon nanotube (VACNT) microbundle arrays with different length-to-diameter ratios were investigated. VACNT microbundle arrays with different length-to-diameter ratios from 4:1 to 30:1 and microscaling of carbon nanotube blocks were fabricated using pulsed laser ablation technology. These VACNT microbundle arrays had a very low threshold field (0.117 V/μm), excellent time stability, and high field emission current densities (137.91 A/cm2). These values are superior to those of carbon nanotubes grown directly on a silicon substrate. The large length-to-diameter ratio and the small diameter of the VACNT microbundles are considered to be the main reasons for the excellent field emission performance.
中文翻译:
用于场发射应用的垂直排列的碳纳米管微束阵列
研究了不同长径比的垂直排列碳纳米管(VACNT)微束阵列的制备,性能和应用。使用脉冲激光烧蚀技术制造了具有从4:1到30:1的不同的长径比的VACNT微束阵列和碳纳米管块微尺度化。这些VACNT微束阵列具有非常低的阈值场(0.117 V /μm),出色的时间稳定性和高场发射电流密度(137.91 A / cm 2)。这些值优于直接在硅衬底上生长的碳纳米管的值。VACNT微束的长径比大和直径小被认为是产生出色场发射性能的主要原因。
更新日期:2020-07-10
中文翻译:
用于场发射应用的垂直排列的碳纳米管微束阵列
研究了不同长径比的垂直排列碳纳米管(VACNT)微束阵列的制备,性能和应用。使用脉冲激光烧蚀技术制造了具有从4:1到30:1的不同的长径比的VACNT微束阵列和碳纳米管块微尺度化。这些VACNT微束阵列具有非常低的阈值场(0.117 V /μm),出色的时间稳定性和高场发射电流密度(137.91 A / cm 2)。这些值优于直接在硅衬底上生长的碳纳米管的值。VACNT微束的长径比大和直径小被认为是产生出色场发射性能的主要原因。