Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors,Advanced Functional Materials

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Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-09-09 , DOI: 10.1002/adfm.202003859
Jingli Wang _{1,

2} , Xuyun Guo ₁ , Zhihao Yu ₃ , Zichao Ma ₄ , Yanghui Liu ₁ , Ziyuan Lin ₁ , Masun Chan ₄ , Ye Zhu ₁ , Xinran Wang ₃ , Yang Chai _{1,

2}

Affiliation

A fundamental limit for the supply voltage of conventional field‐effect transistors is the long high‐energy tail of the Boltzmann distribution of the carrier population at the source junction, which requires a gate voltage at least 60 mV to change one decade of current. Here 2D semiconductors are adopted as channel materials and hafnium zirconium oxide (HZO) as negative capacitance (NC) gate stack to realize low‐power complementary logic inverter. With HZO/Al₂O₃ NC gate stack, the 2D semiconductor field‐effect transistor (FET) shows an average subthreshold slope less than Boltzmann limit (as low as 18 mV dec⁻¹) at room temperature for both forward and reverse gate voltage sweeps, which allows to reach the same ON‐state current at a lower V_dd without increasing the OFF‐state current. The drain current can be modulated by 5 × 10⁴ within 220 mV, still exhibiting average SS below 60 mV dec⁻¹. By constructing van der Waals contact to improve the charge injection and control the carrier type, unipolar p‐type WSe₂ FET with reduced hole Schottky barrier height is achieved. The complementary inverter with MoS₂ and WSe₂ NCFETs shows the power consumption of 68 pW.

中文翻译：

具有负电容2D半导体晶体管的低功率互补逆变器

常规场效应晶体管的电源电压的基本限制是源极结处载流子的玻尔兹曼分布的高能长尾巴，这需要栅极电压至少60 mV才能改变十倍电流。这里采用2D半导体作为沟道材料，采用氧化z锆（HZO）作为负电容（NC）栅极叠层，以实现低功耗互补逻辑反相器。使用HZO / Al ₂ O ₃ NC栅极堆叠，在室温下，正向和反向栅极电压的2D半导体场效应晶体管（FET）的平均亚阈值斜率均小于Boltzmann极限（低至18 mV dec ^-1）扫频，从而可以在较低的V下达到相同的导通状态电流_dd而不增加OFF状态电流。漏极电流可以在220 mV内通过5×10 ⁴进行调制，但仍表现出低于60 mV dec ^-1的平均SS 。通过构建范德华接触以改善电荷注入并控制载流子类型，可实现具有减小的空穴肖特基势垒高度的单极p型WSe ₂ FET。具有MoS ₂和WSe ₂ NCFET的互补逆变器的功耗为68 pW。

更新日期：2020-11-12

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