High‐Quality Si‐Doped β‐Ga2O3 Films on Sapphire Fabricated by Pulsed Laser Deposition,Physica Status Solidi (B) - Basic Solid State Physics

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High‐Quality Si‐Doped β‐Ga2O3 Films on Sapphire Fabricated by Pulsed Laser Deposition
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-09-08 , DOI: 10.1002/pssb.202000362
Sergiy Khartsev ₁ , Nils Nordell ₁ , Mattias Hammar ₁ , Juris Purans ₂ , Anders Hallén ₁

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Pulsed laser ablation is used to form high‐quality silicon‐doped β‐Ga₂O₃ films on sapphire by alternatively depositing Ga₂O₃ and Si from two separate sources. X‐ray analysis reveals a single crystallinity with a full width at half maximum for the rocking curve around the (−201) reflection peak of 1.6°. Silicon doping concentration is determined by elastic recoil detection analysis (ERDA), and the best electrical performance is reached at a Si concentration of about 1 × 10²⁰ cm⁻³, using optimized deposition parameters. It is found that a high crystalline quality and a mobility of about 2.9 cm² (V s)⁻¹ can be achieved by depositing Si and Ga₂O₃ from two separate sources. Two types of Schottky contacts are fabricated: one with a pure Pt and one with a PtO_x composition. Electrical results from these structures are also presented.

中文翻译：

通过脉冲激光沉积在蓝宝石上制备高质量的Si掺杂β-Ga2O3薄膜

脉冲激光烧蚀来形成高品质的硅掺杂的β-Ga _2层ö ₃通过交替沉积镓在蓝宝石上的薄膜₂ ö ₃由两个分开的源和Si。X射线分析揭示了单一结晶度，该结晶度具有围绕（-201）反射峰1.6°的摇摆曲线的一半的最大值。通过弹性反冲检测分析（ERDA）确定硅掺杂浓度，并使用优化的沉积参数在约1×10 ²⁰ cm ^-3的Si浓度下达到最佳电性能。发现高结晶质量和约2.9cm ² （V s）^-1的迁移率可以通过从两个不同的源沉积Si和Ga ₂ O ₃来实现。制造了两种类型的肖特基接触：一种具有纯Pt，一种具有PtO _x成分。还显示了这些结构的电学结果。

更新日期：2020-09-08

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