Dual‐Gated MoS2 Memtransistor Crossbar Array,Advanced Functional Materials

当前位置： X-MOL 学术 › Adv. Funct. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Dual‐Gated MoS2 Memtransistor Crossbar Array
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-09-06 , DOI: 10.1002/adfm.202003683
Hong‐Sub Lee _{1,

2} , Vinod K. Sangwan ₁ , William A. Gaviria Rojas ₁ , Hadallia Bergeron ₁ , Hye Yun Jeong ₁ , Jiangtan Yuan ₁ , Katherine Su ₁ , Mark C. Hersam _{1,

3}

Affiliation

Memristive systems offer biomimetic functions that are being actively explored for energy‐efficient neuromorphic circuits. In addition to providing ultimate geometric scaling limits, 2D semiconductors enable unique gate‐tunable responses including the recent realization of hybrid memristor and transistor devices known as memtransistors. In particular, monolayer MoS₂ memtransistors exhibit nonvolatile memristive switching where the resistance of each state is modulated by a gate terminal. Here, further control over the memtransistor neuromorphic response through the introduction of a second gate terminal is gained. The resulting dual‐gated memtransistors allow tunability over the learning rate for non‐Hebbian training where the long‐term potentiation and depression synaptic behavior is dictated by gate biases during the reading and writing processes. Furthermore, the electrostatic control provided by dual gates provides a compact solution to the sneak current problem in traditional memristor crossbar arrays. In this manner, dual gating facilitates the full utilization and integration of memtransistor functionality in highly scaled crossbar circuits. Furthermore, the tunability of long‐term potentiation yields improved linearity and symmetry of weight update rules that are utilized in simulated artificial neural networks to achieve a 94% recognition rate of hand‐written digits.

中文翻译：

双栅极MoS2 Memtransistor交叉开关阵列

忆阻系统提供仿生功能，正在积极探索节能神经形态电路。除了提供最终的几何比例限制外，二维半导体还实现了独特的门可调响应，包括最近实现了混合忆阻器和称为忆阻器的晶体管器件。特别是单层MoS ₂忆阻晶体管表现出非易失性忆阻开关，其中每个状态的电阻都由栅极端子调制。在这里，通过引入第二个栅极端子，可以进一步控制膜晶体管的神经形态反应。由此产生的双门晶体管在非Hebbian培训中具有可调的学习速率，在长期学习中，长期的增强和抑郁突触行为是由读写过程中的门偏置决定的。此外，由双门提供的静电控制为传统忆阻器交叉开关阵列中的潜电流问题提供了紧凑的解决方案。以这种方式，双门控有助于在高度缩放的纵横制电路中充分利用和集成忆阻器功能。此外，

更新日期：2020-11-04

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南