Titanium dioxide (TiO₂) thin films were synthesized by sol–gel process followed by post-deposition heat treatment using rapid thermal annealing (RTA) to improve the film quality. TiO₂ thin films were annealed at various temperatures ranging from 500 to 900 °C for 1–10 min in air and oxygen ambient. The uniform distribution of grains has been studied by analyzing field emission scanning electron microscope micrographs. The structural studies were carried out by X-ray diffraction and Raman spectroscopy technique which have confirmed the presence of anatase and rutile phase after annealing at 700 °C. The maximum values of oxide charge density (Q_ox) and interface charge density (D_it) were calculated as 2.58 × 10¹² cm⁻² and 2.31 × 10¹² eV⁻¹ cm⁻² at 900 °C and 2.19 × 10¹² cm⁻² and 1.53 × 10¹² eV⁻¹ cm⁻² at 700 °C, for 10 min annealing duration in air ambient, respectively. The resistive switching studies have shown better switching performance at 700 °C for 10 min in air ambient with current on/off ratio of 40. Moreover, for films RTA processed at 700 °C for 5 min in air and oxygen ambient the current on/off ratios were found to be 836 and 140, respectively.

通过溶胶-凝胶工艺合成二氧化钛（TiO ₂）薄膜，然后使用快速热退火（RTA）进行后沉积热处理以提高薄膜质量。TiO ₂薄膜在空气和氧气环境中于500至900°C的不同温度下退火1-10分钟。通过分析场发射扫描电子显微镜显微照片，研究了晶粒的均匀分布。结构研究是通过X射线衍射和拉曼光谱技术进行的，证实了在700°C退火后存在锐钛矿和金红石相。计算出的氧化物电荷密度（Q _ox）和界面电荷密度（D _it）的最大值为2.58×10¹² 厘米^-2和2.31×10 ¹² 电子伏特^-1 厘米^-2，在900℃，2.19×10 ¹² 厘米^-2和1.53×10 ¹² 电子伏特^-1 厘米^-2在700℃，10分钟退火时间在空气中环境。电阻性开关研究表明，在空气环境中700°C的情况下10分钟的开关性能更好，电流开/关比为40。此外，对于RTA薄膜，在空气和氧气环境中700°C的情况下处理5分钟的电流，开/关发现不合格率分别为836和140。