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Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-08-28 , DOI: 10.1002/admi.202000860
Ya‐Ting Chan, Yi Fu, Lu Yu, Feng‐Yu Wu, Ho‐Wei Wang, Ting‐Han Lin, Shun‐Hsiang Chan, Ming‐Chung Wu, Jer‐Chyi Wang

The rise of artificial intelligence and Internet of Things has led to an increase in the demand for a large amount of data computing in recent years. To fulfill the requirements of neuromorphic engineering, a promising system composed of artificial neurons and synapses has to be developed. Here, a cheap and mass‐productive compacted self‐assembly (CSA) graphene with hydrogen (H2) plasma surface modification is used as the bottom electrode (BE) of gadolinium oxide (GdxOy) memristors to emulate the robust synapses in neuromorphic systems. As the plasma treatment time increases, the increased resistance ratio and reduced operating voltages of GdxOy memristors are obtained, which can be attributed to the removal of functional groups on graphene flakes and the enhancement in the redox reaction of CSA graphene during the resistive switching. The GdxOy memristors with a 10 min H2 plasma surface modified CSA graphene BE present outstanding reliabilities of data retention for more than 104 s and cycling operation up to 150 times. Additionally, superior bionic characteristics with more adjustable synaptic weight and more harmonious spike‐timing‐dependent plasticity (STDP) behaviors of GdxOy memristors with H2 plasma surface modified CSA graphene BEs are achieved, providing an opportunity for the applications in future neuromorphic computing systems.

中文翻译:

具有氢等离子体表面修饰的紧凑型自组装石墨烯,用于氧化Ox忆阻器的稳健人工电子突触

近年来,人工智能和物联网的兴起导致对大量数据计算的需求增加。为了满足神经形态工程学的要求,必须开发由人工神经元和突触组成的有前途的系统。在这里,一种廉价且批量生产的具有氢(H 2)等离子体表面改性的紧凑型自组装(CSA)石墨烯被用作氧化g(Gd x O y)忆阻器的底部电极(BE),以模拟鲁棒的突触。神经形态系统。随着等离子体处理时间的增加,Gd x O y的电阻比增加,工作电压降低获得了忆阻器,其可归因于在电阻切换期间石墨烯薄片上的官能团的去除和CSA石墨烯的氧化还原反应的增强。具有10分钟的H 2等离子体表面改性的CSA石墨烯BE的Gd x O y忆阻器具有出色的数据保留可靠性,可保持10 4 s以上的时间,并可以进行150次循环操作。此外,具有H 2的Gd x O y忆阻器具有卓越的仿生特性,具有可调节的突触重量和更和谐的依赖于尖峰时序的可塑性(STDP)行为 实现了等离子体表面改性的CSA石墨烯BE,为将来的神经形态计算系统中的应用提供了机会。
更新日期:2020-10-26
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