Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes.,Nano Letters

当前位置： X-MOL 学术 › Nano Lett. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes.
Nano Letters ( IF 9.6 ) Pub Date : 2020-08-24 , DOI: 10.1021/acs.nanolett.0c02531
Qinqin Wang _{1,

2} , Na Li _{1,

2} , Jian Tang _{1,

2} , Jianqi Zhu _{1,

2} , Qinghua Zhang _{1,

2} , Qi Jia _{1,

2} , Ying Lu _{1,

2} , Zheng Wei _{1,

2} , Hua Yu _{1,

2} , Yanchong Zhao _{1,

2} , Yutuo Guo _{1,

2} , Lin Gu _{1,

2} , Gang Sun _{1,

2} , Wei Yang _{1,

2,

3} , Rong Yang _{1,

3,

4} , Dongxia Shi _{1,

2,

3} , Guangyu Zhang _{1,

2,

3,

4}

Affiliation

Two-dimensional molybdenum disulfide (MoS₂) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS₂ wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS₂ wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS₂.

中文翻译：

具有大畴尺寸的晶圆级高度定向单层MoS2。

二维二硫化钼（MoS ₂）是新兴的半导体，在下一代放大电子产品中具有巨大潜力，但是高质量单层MoS ₂晶片的生产仍然是一个挑战。在这里，我们报告了一条通向4英寸单层MoS ₂的外延路线蓝宝石上具有高度取向和大畴的硅片。得益于我们化学气相沉积设置的多源设计和生长工艺的优化，我们成功实现了整个4英寸晶圆的材料均匀性，平均域尺寸大于100μm。这些单分子层表现出有史以来最好的电子质量，这从我们的光谱学和传输特性可以证明。我们的工作更加接近单层MoS _2的实际应用。

更新日期：2020-10-15

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南