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Unveiling interface interaction assisted broadband photoresponse of epitaxial 2D Bi2O2Se on perovskite oxides
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-08-24 , DOI: 10.1039/d0tc03245j Yujie Guo 1, 2, 3, 4, 5 , Yekai Song 5, 6, 7, 8, 9 , Manli Yang 1, 2, 3, 4, 5 , Zhenyu Xu 1, 2, 3, 4, 5 , Haowei Xie 1, 2, 3, 4, 5 , Hui Li 5, 10, 11 , Zhuojun Li 5, 6, 7, 8, 9 , Huawei Liang 1, 2, 3, 4, 5 , Shuangchen Ruan 1, 2, 3, 4, 5 , Yu-Jia Zeng 1, 2, 3, 4, 5
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-08-24 , DOI: 10.1039/d0tc03245j Yujie Guo 1, 2, 3, 4, 5 , Yekai Song 5, 6, 7, 8, 9 , Manli Yang 1, 2, 3, 4, 5 , Zhenyu Xu 1, 2, 3, 4, 5 , Haowei Xie 1, 2, 3, 4, 5 , Hui Li 5, 10, 11 , Zhuojun Li 5, 6, 7, 8, 9 , Huawei Liang 1, 2, 3, 4, 5 , Shuangchen Ruan 1, 2, 3, 4, 5 , Yu-Jia Zeng 1, 2, 3, 4, 5
Affiliation
Bi2O2Se has established itself as a revolutionary two-dimensional (2D) semiconductor owing to its superior electric, optoelectric and thermoelectric properties. The structural compatibility between Bi2O2Se and perovskite oxides makes the investigation of their heterointerfaces an intriguing frontier. Herein, we unveil the Bi2O2Se/SrTiO3 interfacial interaction by studying the photoresponse of the oxide heteroepitaxy. The record-broad photosensitivity (365–1850 nm) is ascribed to a complex interplay between photoconductive, photogating, pyroelectric and photo-thermoelectric (PTE) effects. The distinctive pyroelectricity, which results in a 900-fold decrease in the response time, originates from the surface polarization and relaxation at the Bi2O2Se/SrTiO3 interface. Self-powered behavior is reported for the first time in Bi2O2Se-based photodetectors. Under zero bias, the PTE-dominated photoresponse gives rise to a tunable polarity and magnitude of the photocurrent, and an estimated Seebeck coefficient of −127.8 μV K−1. The optimal photoresponsivity of 12.62 A W−1, external quantum efficiency of 1424.08% and detectivity of 1.51 × 109 Jones indicate the performance advancement of the photodiodes based on as-grown Bi2O2Se. Our study sheds light on the exploitation of exotic physical phenomena at the heterointerfaces between Bi2O2Se and perovskite oxides, and also indicates that 2D Bi2O2Se has a wide range of applications in piezoelectrics, ferroelectrics, self-powered nanogenerators and optical communications.
中文翻译:
揭示界面相互作用辅助钙钛矿氧化物上外延2D Bi2O2Se的宽带光响应
Bi 2 O 2 Se凭借其卓越的电,光电和热电特性,已经确立了自己作为革命性的二维(2D)半导体的地位。Bi 2 O 2 Se和钙钛矿氧化物之间的结构相容性使得对其异质界面的研究成为一个有趣的前沿。在这里,我们推出了Bi 2 O 2 Se / SrTiO 3通过研究氧化物异外延性的光响应来进行界面相互作用。创纪录的光敏性(365–1850 nm)归因于光电导,光门控,热电和光热电(PTE)效应之间的复杂相互作用。独特的热电性(导致响应时间减少900倍)源自Bi 2 O 2 Se / SrTiO 3界面处的表面极化和弛豫。在基于Bi 2 O 2 Se的光电探测器中首次报告了自供电行为。在零偏压下,以PTE为主的光响应会产生可调节的极性和光电流,估计的塞贝克系数为-127.8μVK -1。最佳光响应率为12.62 AW -1,外部量子效率为1424.08%,探测比为1.51×10 9 Jones,表明基于Bi 2 O 2 Se生长的光电二极管的性能提高。我们的研究揭示了Bi 2 O 2 Se与钙钛矿氧化物之间异质界面处奇异物理现象的利用,并且还表明2D Bi 2 O 2 Se在压电,铁电,自供电纳米发电机和半导体中具有广泛的应用。光通信。
更新日期:2020-10-11
中文翻译:
揭示界面相互作用辅助钙钛矿氧化物上外延2D Bi2O2Se的宽带光响应
Bi 2 O 2 Se凭借其卓越的电,光电和热电特性,已经确立了自己作为革命性的二维(2D)半导体的地位。Bi 2 O 2 Se和钙钛矿氧化物之间的结构相容性使得对其异质界面的研究成为一个有趣的前沿。在这里,我们推出了Bi 2 O 2 Se / SrTiO 3通过研究氧化物异外延性的光响应来进行界面相互作用。创纪录的光敏性(365–1850 nm)归因于光电导,光门控,热电和光热电(PTE)效应之间的复杂相互作用。独特的热电性(导致响应时间减少900倍)源自Bi 2 O 2 Se / SrTiO 3界面处的表面极化和弛豫。在基于Bi 2 O 2 Se的光电探测器中首次报告了自供电行为。在零偏压下,以PTE为主的光响应会产生可调节的极性和光电流,估计的塞贝克系数为-127.8μVK -1。最佳光响应率为12.62 AW -1,外部量子效率为1424.08%,探测比为1.51×10 9 Jones,表明基于Bi 2 O 2 Se生长的光电二极管的性能提高。我们的研究揭示了Bi 2 O 2 Se与钙钛矿氧化物之间异质界面处奇异物理现象的利用,并且还表明2D Bi 2 O 2 Se在压电,铁电,自供电纳米发电机和半导体中具有广泛的应用。光通信。