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The Role of the Height Fluctuation Effect in the Tunable Interfacial Electronic Structure of the Vertically Stacked BP/MoS2 Heterojunction
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-08-21 , DOI: 10.1021/acs.jpcc.0c06441
Feng Li 1 , Shilei Ji 1 , Hong Wu 1 , Shuang Zhou 1 , Wei Niu 1 , Lujun Wei 1 , Wenzhong Bao 2 , Yong Pu 1
Affiliation  

Two-dimensional (2D) van der Waals (vdw) heterojunction devices exploiting unique physical properties are the backbone of new electrical, magnetic, and optical sensing technologies, a key advantage of 2D superior to the bulk. Here, we proposed the black phosphorus/MoS2 vdw heterostructure (BP/MoS2) as a good 2D semiconductor with a series of encouraging functionalities. Rather than individual p- and n-type semiconductors, the BP/MoS2 heterostructure possesses a clear NP junction at the interface with a half indirect band gap of a pristine BP monolayer. Compared to the original 2D BP, a non-ignorable height fluctuation of the BP sheet is found on the MoS2 sheet, resulting in ∼9° distortion. In which, the arching degree of the BP layer is performing a strong modulation on the electronic properties, which can be tuned by the external strains. As a result, an irregular indirect–direct semiconducting transition and semiconductor–metal transition are found under strain engineering. This unusual electronic tunability under strains is attributed to the large differences in the mechanical properties of BP and MoS2 layers. The electronic property of the 2D BP/MoS2 heterostructure can also be manipulated significantly by an electric field. High visible-light absorption is found in this heterostructure as the photoexcited electrons and holes can be well separated due to the staggered-gap band alignment effect. All these desired properties render the 2D BP/MoS2 heterostructure a promising candidate in the electronic and photoelectronic devices.

中文翻译:

高度波动效应在垂直堆叠的BP / MoS 2异质结的可调界面电子结构中的作用

利用独特物理特性的二维(2D)范德华(vdw)异质结器件是新的电,磁和光传感技术的支柱,这是2D优于整体技术的关键优势。在这里,我们提出了黑磷/ MoS 2 vdw异质结构(BP / MoS 2)作为具有一系列令人鼓舞功能的良好二维半导体。而不是单独的p -和n -型半导体时,BP / MOS 2异质结构在与原始BP单层的一半间接带隙的具有界面清晰的NP结。与原始2D BP相比,在MoS 2上发现BP板的高度高度不可忽略板材,导致〜9°变形。其中,BP层的拱起度正在对电子性能进行强调制,可以通过外部应变对其进行调节。结果,在应变工程中发现了不规则的间接-直接半导体过渡和半导体-金属过渡。应变下这种异常的电子可调性归因于BP和MoS 2层的机械性能的巨大差异。2D BP / MoS 2的电子属性异质结构也可以被电场显着操纵。在这种异质结构中发现了很高的可见光吸收,因为由于带隙隙带排列效应,光激发的电子和空穴可以很好地分离。所有这些期望的特性使得2D BP / MoS 2异质结构成为电子和光电设备中有希望的候选者。
更新日期:2020-09-18
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