2D Semiconductor Transistors with Van der Waals Oxide MoO3 as Integrated High‐κ Gate Dielectric,Advanced Electronic Materials

当前位置： X-MOL 学术 › Adv. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

2D Semiconductor Transistors with Van der Waals Oxide MoO3 as Integrated High‐κ Gate Dielectric
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-08-19 , DOI: 10.1002/aelm.202000635
Brian A. Holler ₁ , Kyle Crowley ₁ , Marie‐Hélène Berger ₂ , Xuan P. A. Gao ₁

Affiliation

The search for smaller electronic and optoelectronic devices is a leading research towards atomically thin graphene‐like 2D semiconductor materials. Due to the decreasing size and unique van der Waals (vdW) nature of these 2D semiconductors, there is an imperative need to find compatible gate dielectrics that can enable high gate coupling efficiency and seamless integration with these materials. One possible approach is to identify and utilize 2D vdW oxides with high dielectric constants, κ, similar to the integration of high‐κ dielectrics HfO₂ and ZrO₂. To this end, MoO₃ is an attractive transition metal oxide candidate for gate dielectrics in 2D field effect transistors (FETs) due to its vdW structure in addition to its high dielectric constant measured in the bulk. This study demonstrates that as‐grown MoO₃ has a high dielectric constant, κ, of ≈35 at room temperature at low frequencies by fabricating parallel plate capacitors from these thin flakes. Most importantly, mechanically exfoliated MoO₃ nanoflakes are used to create heterostructures with WSe₂ and a top‐gate WSe₂/MoO₃ heterostructure FET is demonstrated, showing the potential of MoO₃ as a promising high‐κ 2D vdW gate dielectric.

中文翻译：

带有Van der Waals氧化物MoO3作为集成高k栅极电介质的2D半导体晶体管

寻找更小的电子和光电设备是对原子薄的类似于石墨烯的2D半导体材料的领先研究。由于这些2D半导体尺寸的减小和独特的范德华（vdW）性质，迫切需要找到可实现高栅极耦合效率并与这些材料无缝集成的兼容栅极电介质。一种可能的方法是识别和利用具有高介电常数κ的2d vdW氧化物，类似于高κ介电常数HfO ₂和ZrO ₂的集成。为此，MoO ₃由于其vdW结构以及在整体中测得的高介电常数，它是2D场效应晶体管（FET）中栅极电介质的有吸引力的过渡金属氧化物候选材料。这项研究表明，通过使用这些薄片制成平行板电容器，在室温下低频下，已生长的MoO ₃具有约35的高介电常数κ。最重要的是，使用机械剥离的MoO ₃纳米薄片与WSe ₂形成异质结构，并证明了顶部栅极WSe ₂ / MoO ₃异质结构FET，显示出MoO ₃作为有前途的高κ2D vdW栅极电介质的潜力。

更新日期：2020-10-11

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南