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Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2020-08-06 , DOI: 10.1021/acsanm.0c01448 Yang Fu 1 , Dawei He 1 , Jiaqi He 2 , Xiuxiu Han 1 , Jinxuan Bai 1 , Yongsheng Wang 1 , Hui Zhao 3
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2020-08-06 , DOI: 10.1021/acsanm.0c01448 Yang Fu 1 , Dawei He 1 , Jiaqi He 2 , Xiuxiu Han 1 , Jinxuan Bai 1 , Yongsheng Wang 1 , Hui Zhao 3
Affiliation
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We present an experimental investigation on photocarrier dynamics in a TlGaS2 bulk crystal and its heterostructures with hexagonal BN and WS2. The samples were obtained by mechanical exfoliation and dry transfer techniques. The photocarrier dynamics was monitored by a transient absorption technique. We observed a direct optical transition of about 555 nm in the TlGaS2 crystal. By utilizing transient absorption of that transition, we obtained a hot-carrier energy relaxation time of less than 1 ps and a carrier lifetime of about 300 ps in TlGaS2 at room temperature. In the hexagonal-BN-TlGaS2 heterostructure, the photocarrier dynamics was similar to that in TlGaS2, indicating the type-I band alignment of this structure with both band extremes located in TlGaS2. In the monolayer WS2-TlGaS2 heterostructure, we observed charge transfer from TlGaS2 to WS2 and an extended lifetime of the transferred carriers in WS2. These results introduce TlGaS2 as a promising layered material for developing two-dimensional van der Waals materials that can be combined with other two-dimensional materials for various optoelectronic devices.
中文翻译：
六方氮化硼和WS 2纳米薄片在TlGaS 2纳米薄片和范德华异质结构中的光电载子动力学：对光电应用的影响
我们目前对TlGaS 2块状晶体及其六方BN和WS 2的异质结构中光载流子动力学的实验研究。通过机械剥离和干转移技术获得样品。通过瞬态吸收技术监测光电载体的动力学。我们在TlGaS 2晶体中观察到约555 nm的直接光学跃迁。通过利用该跃迁的瞬态吸收，我们在室温下在TlGaS 2中获得了小于1 ps的热载流子能量弛豫时间和约300 ps的载流子寿命。在六角形的BN-TlGaS 2异质结构中，光载流子动力学与TlGaS 2中的相似，表明该结构的I型能带对准，两个带的极值都位于TlGaS 2中。在单层WS 2个-TlGaS 2异质结构，我们观察到从TlGaS电荷转移2至WS 2和转移载体在WS延长的寿命2。这些结果将TlGaS 2用作开发二维范德华材料的有希望的分层材料，该材料可以与其他二维材料结合用于各种光电器件。
更新日期：2020-09-25
中文翻译：
六方氮化硼和WS 2纳米薄片在TlGaS 2纳米薄片和范德华异质结构中的光电载子动力学：对光电应用的影响
我们目前对TlGaS 2块状晶体及其六方BN和WS 2的异质结构中光载流子动力学的实验研究。通过机械剥离和干转移技术获得样品。通过瞬态吸收技术监测光电载体的动力学。我们在TlGaS 2晶体中观察到约555 nm的直接光学跃迁。通过利用该跃迁的瞬态吸收，我们在室温下在TlGaS 2中获得了小于1 ps的热载流子能量弛豫时间和约300 ps的载流子寿命。在六角形的BN-TlGaS 2异质结构中，光载流子动力学与TlGaS 2中的相似，表明该结构的I型能带对准，两个带的极值都位于TlGaS 2中。在单层WS 2个-TlGaS 2异质结构，我们观察到从TlGaS电荷转移2至WS 2和转移载体在WS延长的寿命2。这些结果将TlGaS 2用作开发二维范德华材料的有希望的分层材料，该材料可以与其他二维材料结合用于各种光电器件。
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