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High‐Fidelity Transfer of 2D Bi2O2Se and Its Mechanical Properties
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-08-05 , DOI: 10.1002/adfm.202004960 Wenjun Chen 1 , Usman Khan 1 , Simin Feng 1 , Baofu Ding 1 , Xiaomin Xu 1 , Bilu Liu 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-08-05 , DOI: 10.1002/adfm.202004960 Wenjun Chen 1 , Usman Khan 1 , Simin Feng 1 , Baofu Ding 1 , Xiaomin Xu 1 , Bilu Liu 1
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2D bismuth oxyselenide (Bi2O2Se) with high electron mobility is advantageous in future high‐performance and flexible electronic and optoelectronic devices. However, transfer of thin Bi2O2Se flakes is rather challenging, restricting measurements of its mechanical properties and application exploration in flexible devices. Here, a reliable and effective polydimethylsiloxane (PDMS)‐mediated method that allows transferring thin Bi2O2Se flakes from grown substrates onto target substrates like microelectromechanical system substrates is developed. The high fidelity of the transferred thin flakes stems from the high adhesive energy and flexibility of PDMS film. For the first time, the mechanical properties of 2D Bi2O2Se are experimentally acquired with a nanoindentation method. It is found that few‐layer Bi2O2Se exhibits a large intrinsic stiffness of 18–23 GPa among 2D semiconductors, and a Young's modulus of 88.7 ± 14.4 GPa, which is consistent with the theoretical values. Furthermore, few‐layer Bi2O2Se can withstand a high radial strain of more than 3%, demonstrating excellent flexibility. The development of the reliable transfer method and documentation of mechanical properties of 2D Bi2O2Se jointly fill the gap between theoretical prediction and experimental verification of mechanical properties of this emerging material, and will promote flexible electronics and optoelectronics based on 2D Bi2O2Se.
中文翻译：
二维Bi2O2Se的高保真传递及其力学性能
具有高电子迁移率的二维氧化硒化铋（Bi 2 O 2 Se）在未来的高性能，柔性电子和光电设备中具有优势。然而，薄Bi 2 O 2 Se薄片的转移非常具有挑战性，限制了其机械性能的测量以及在柔性设备中的应用探索。在这里，一种可靠有效的聚二甲基硅氧烷（PDMS）介导的方法可以转移薄的Bi 2 O 2将硒从生长的薄片剥落到目标衬底上，例如微机电系统衬底。转移的薄片的高保真度源于PDMS膜的高粘合力和柔韧性。首次使用纳米压痕方法获得了二维Bi 2 O 2 Se的机械性能。发现在2D半导体中，很少层的Bi 2 O 2 Se表现出18-23 GPa的大固有刚度，以及88.7±14.4 GPa的杨氏模量，这与理论值一致。此外，很少层的Bi 2 O 2硒可以承受超过3％的高径向应变，显示出出色的柔韧性。二维Bi 2 O 2 Se的可靠转移方法的发展和机械性能的文献记载，共同填补了该新兴材料的力学性能的理论预测与实验验证之间的空白，并将促进基于2D Bi 2 O的柔性电子学和光电子学2硒
更新日期：2020-08-05
中文翻译：
二维Bi2O2Se的高保真传递及其力学性能
具有高电子迁移率的二维氧化硒化铋（Bi 2 O 2 Se）在未来的高性能，柔性电子和光电设备中具有优势。然而，薄Bi 2 O 2 Se薄片的转移非常具有挑战性，限制了其机械性能的测量以及在柔性设备中的应用探索。在这里，一种可靠有效的聚二甲基硅氧烷（PDMS）介导的方法可以转移薄的Bi 2 O 2将硒从生长的薄片剥落到目标衬底上，例如微机电系统衬底。转移的薄片的高保真度源于PDMS膜的高粘合力和柔韧性。首次使用纳米压痕方法获得了二维Bi 2 O 2 Se的机械性能。发现在2D半导体中，很少层的Bi 2 O 2 Se表现出18-23 GPa的大固有刚度，以及88.7±14.4 GPa的杨氏模量，这与理论值一致。此外，很少层的Bi 2 O 2硒可以承受超过3％的高径向应变，显示出出色的柔韧性。二维Bi 2 O 2 Se的可靠转移方法的发展和机械性能的文献记载，共同填补了该新兴材料的力学性能的理论预测与实验验证之间的空白，并将促进基于2D Bi 2 O的柔性电子学和光电子学2硒
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