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Self-Recovery of Defective PbTiO3 Film with Enhanced Piezoelectricity by Homogenizing Annealing
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2020-07-22 , DOI: 10.1021/acs.cgd.0c00640 Long Cheng 1, 2 , Yunlong Tang 1 , Yinlian Zhu 1 , Xiuliang Ma 1, 3
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2020-07-22 , DOI: 10.1021/acs.cgd.0c00640 Long Cheng 1, 2 , Yunlong Tang 1 , Yinlian Zhu 1 , Xiuliang Ma 1, 3
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Impurity defects are often involved in the growth of thin films by pulsed laser deposition (PLD), which is intrinsically a nonequilibrium process governed by competition between kinetics and thermodynamics. Generally, the growth of oxide films by PLD will introduce defects and/or impurities which lead to the degradation of related properties. Here we show that postannealing could cure defective PbTiO3 (PTO) thin films grown by PLD. A series of PTO thin films were grown on (001) SrTiO3 (STO) under low oxygen pressure and further investigated by piezoelectric force microscopy (PFM) and (scanning) transmission electron microscopy ((S)TEM). It was found that there are many impurity defects buried in the PTO films. These films were annealed at different temperatures. The defects completely vanished after annealing at 700 °C in the furnace, following a significant recovery. The significance of this Article is not only to provide a method for eliminating low-dimension defects, but also to provide an understanding of coupling relationship between defect-domain walls.
中文翻译：
均质退火技术改善压电缺陷PbTiO 3膜的自恢复
杂质缺陷通常涉及通过脉冲激光沉积（PLD）进行的薄膜生长，这本质上是一种非平衡过程，受动力学和热力学之间的竞争支配。通常，通过PLD生长氧化膜将引入缺陷和/或杂质，这导致相关性能的降低。在这里，我们显示了后退火可以固化由PLD生长的缺陷PbTiO 3（PTO）薄膜。在（001）SrTiO 3上生长了一系列PTO薄膜（STO）在低氧气压力下进行进一步研究，并通过压电力显微镜（PFM）和（扫描）透射电子显微镜（（S）TEM）进行了研究。发现在PTO膜中埋有许多杂质缺陷。这些膜在不同温度下退火。在炉中在700°C的温度下退火后，缺陷得以完全消失，并得到了明显的恢复。本文的意义不仅在于提供一种消除低维缺陷的方法，而且还可以提供对缺陷域壁之间耦合关系的理解。
更新日期：2020-09-02
中文翻译：
均质退火技术改善压电缺陷PbTiO 3膜的自恢复
杂质缺陷通常涉及通过脉冲激光沉积（PLD）进行的薄膜生长，这本质上是一种非平衡过程，受动力学和热力学之间的竞争支配。通常，通过PLD生长氧化膜将引入缺陷和/或杂质，这导致相关性能的降低。在这里，我们显示了后退火可以固化由PLD生长的缺陷PbTiO 3（PTO）薄膜。在（001）SrTiO 3上生长了一系列PTO薄膜（STO）在低氧气压力下进行进一步研究，并通过压电力显微镜（PFM）和（扫描）透射电子显微镜（（S）TEM）进行了研究。发现在PTO膜中埋有许多杂质缺陷。这些膜在不同温度下退火。在炉中在700°C的温度下退火后，缺陷得以完全消失，并得到了明显的恢复。本文的意义不仅在于提供一种消除低维缺陷的方法，而且还可以提供对缺陷域壁之间耦合关系的理解。
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