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Recent Progress on Energy-Related Applications of HfO2-Based Ferroelectric and Antiferroelectric Materials
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-07-23 , DOI: 10.1021/acsaelm.0c00304 Faizan Ali 1, 2 , Dayu Zhou 1 , Mohsin Ali 1 , Hafiz Waqas Ali 1 , Muhammad Daaim 1 , Sheeraz Khan 1 , Muhammad Muzammal Hussain 1 , Nana Sun 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-07-23 , DOI: 10.1021/acsaelm.0c00304 Faizan Ali 1, 2 , Dayu Zhou 1 , Mohsin Ali 1 , Hafiz Waqas Ali 1 , Muhammad Daaim 1 , Sheeraz Khan 1 , Muhammad Muzammal Hussain 1 , Nana Sun 1
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Ferroelectric and antiferroelectric materials are promising options for energy-related (such as energy harvesting, energy storage, IR detection, and refrigeration) and memory applications (such as ferroelectric random-access memory (FeRAM) and ferroelectric field-effect transistor (FeFET)). In the past, several classes of materials (such as polymers, ceramics, single crystals, and glasses) have been studied for these properties. However, because of a large deposition thickness (in micrometers or larger), these materials are inappropriate for future nanoscale devices. Recently, the ferroelectric and antiferroelectric HfO2-based thin films have also been studied for the energy-related and memory applications. HfO2-based materials have many advantages over the conventional materials, such as compatibility with Si-based semiconductor technology, ultrasmall thicknesses (nm), and simple compositions, and they are appropriate for integration within 3-D nanostructures. HfO2-based materials can be promising for energy-related applications, such as energy storage, pyroelectric energy harvesting, IR sensors, and solid-state cooling. This article provides some basic knowledge of these energy-related properties. Moreover, this article reviews the energy-related properties of HfO2-based thin films, their origins, and the prospects of this research field.
中文翻译：
基于HfO 2的铁电和反铁电材料在能源相关应用方面的最新进展
铁电和反铁电材料是与能源相关的（例如能量收集，能量存储，IR检测和制冷）和存储应用（例如铁电随机存取存储器（FeRAM）和铁电场效应晶体管（FeFET））的有前途的选择。过去，已经针对这些性能研究了几类材料（例如聚合物，陶瓷，单晶和玻璃）。但是，由于沉积厚度大（微米或更大），因此这些材料不适用于未来的纳米级器件。近来，也已经研究了基于HfO 2的铁电和反铁电薄膜用于与能量有关的和存储器应用。HfO 2基材料比常规材料具有许多优势，例如与硅基半导体技术的兼容性，超小厚度（nm）和简单的成分，它们适合集成在3-D纳米结构中。基于HfO 2的材料在与能源相关的应用中很有希望，例如能量存储，热电能量收集，IR传感器和固态冷却。本文提供了有关这些与能量有关的属性的一些基本知识。此外，本文回顾了基于HfO 2的薄膜的能量相关特性，其起源以及该研究领域的前景。
更新日期：2020-08-25
中文翻译：
基于HfO 2的铁电和反铁电材料在能源相关应用方面的最新进展
铁电和反铁电材料是与能源相关的（例如能量收集，能量存储，IR检测和制冷）和存储应用（例如铁电随机存取存储器（FeRAM）和铁电场效应晶体管（FeFET））的有前途的选择。过去，已经针对这些性能研究了几类材料（例如聚合物，陶瓷，单晶和玻璃）。但是，由于沉积厚度大（微米或更大），因此这些材料不适用于未来的纳米级器件。近来，也已经研究了基于HfO 2的铁电和反铁电薄膜用于与能量有关的和存储器应用。HfO 2基材料比常规材料具有许多优势，例如与硅基半导体技术的兼容性，超小厚度（nm）和简单的成分，它们适合集成在3-D纳米结构中。基于HfO 2的材料在与能源相关的应用中很有希望，例如能量存储，热电能量收集，IR传感器和固态冷却。本文提供了有关这些与能量有关的属性的一些基本知识。此外，本文回顾了基于HfO 2的薄膜的能量相关特性，其起源以及该研究领域的前景。
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