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Preparation and characterisation of aluminium zirconium oxide for metal‐oxide‐semiconductor capacitor
International Journal of Energy Research ( IF 4.3 ) Pub Date : 2020-07-23 , DOI: 10.1002/er.5693 Hock Jin Quah 1 , Zainuriah Hassan 1 , Way Foong Lim 1
International Journal of Energy Research ( IF 4.3 ) Pub Date : 2020-07-23 , DOI: 10.1002/er.5693 Hock Jin Quah 1 , Zainuriah Hassan 1 , Way Foong Lim 1
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A functional type metal‐oxide‐semiconductor (MOS) based capacitor was fabricated and studied by using aluminium zirconium oxide (AlxZryOz) as a potential high dielectric constant (k) gate oxide, which was transformed from as‐sputtered Al‐Zr alloy after undergoing a wet oxidation at 400°C, 600°C, 800°C, and 1000°C in the presence of nitrogen as a carrier gas. A mixture of tetragonal ZrO2‐monoclinic AlxZryOz phases were present at 600°C while stablized tetragonal AlxZryOz phases were detected at higher temperatures with a minute micro strain change. The largest k value (21) was obtained by the film oxidised at 600°C, followed by 800°C while the lowest one at 1000°C. The discrepancy was due to the absence of tetragonal ZrO2 in the latter films. The attainment of a k value closer to the reported value for ZrO2 at 600°C suggested that the tetragonal ZrO2 phase was one of the factors yielding a high k value at 600°C. However, further investigation was required for this sample because the slow trap density and total interface trap density was high despite a high k value, mainly attributed to the presence of negatively charged traps as the scattering centre in the film. The film obtained at 1000°C was not encourageable to be deployed as a passivation layer for Si MOS device due to its low k controlled by the thick interfacial layer.
中文翻译：
金属氧化物半导体电容器用氧化锆铝的制备与表征
通过使用铝锆氧化物（Al x Zr y O z）作为潜在的高介电常数（k）栅极氧化物（由溅射的Al转化而来）来制造和研究功能型金属氧化物半导体（MOS）基电容器‐Zr合金在氮气作为载气存在下于400°C，600°C，800°C和1000°C进行湿式氧化后。在600°C存在四方ZrO 2-单斜Al x Zr y O z相的混合物，而稳定的四方Al x Zr y O z在较高的温度下检测到了两相，并且微应变变化很小。通过在600°C氧化膜，然后在800°C氧化膜，获得最大的k值（21），而在1000°C氧化膜的最低k值。差异是由于在后面的薄膜中不存在四方的ZrO 2所致。一个的实现ķ值接近报告值的ZrO 2在600℃下建议四方ZrO 2相为产生高的因素之一ķ在600℃下的值。但是，尽管k值很高，但由于缓慢的陷阱陷阱密度和总界面陷阱密度很高，因此需要对该样品进行进一步的研究。值，主要归因于在薄膜中存在带负电荷的陷阱作为散射中心。在1000℃下获得的膜由于其由厚界面层控制的低k值，因此不鼓励将其用作Si MOS器件的钝化层。
更新日期：2020-07-23
中文翻译：
金属氧化物半导体电容器用氧化锆铝的制备与表征
通过使用铝锆氧化物（Al x Zr y O z）作为潜在的高介电常数（k）栅极氧化物（由溅射的Al转化而来）来制造和研究功能型金属氧化物半导体（MOS）基电容器‐Zr合金在氮气作为载气存在下于400°C，600°C，800°C和1000°C进行湿式氧化后。在600°C存在四方ZrO 2-单斜Al x Zr y O z相的混合物，而稳定的四方Al x Zr y O z在较高的温度下检测到了两相，并且微应变变化很小。通过在600°C氧化膜，然后在800°C氧化膜，获得最大的k值（21），而在1000°C氧化膜的最低k值。差异是由于在后面的薄膜中不存在四方的ZrO 2所致。一个的实现ķ值接近报告值的ZrO 2在600℃下建议四方ZrO 2相为产生高的因素之一ķ在600℃下的值。但是，尽管k值很高，但由于缓慢的陷阱陷阱密度和总界面陷阱密度很高，因此需要对该样品进行进一步的研究。值，主要归因于在薄膜中存在带负电荷的陷阱作为散射中心。在1000℃下获得的膜由于其由厚界面层控制的低k值，因此不鼓励将其用作Si MOS器件的钝化层。
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