Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure.,Advanced Materials

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Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-07-21 , DOI: 10.1002/adma.202001460
Lei Pan ₁ , Alexander Grutter ₂ , Peng Zhang ₁ , Xiaoyu Che ₁ , Tomohiro Nozaki ₃ , Alex Stern ₄ , Mike Street ₅ , Bing Zhang ₆ , Brian Casas ₄ , Qing Lin He _{1,

7} , Eun Sang Choi ₈ , Steven M Disseler ₂ , Dustin A Gilbert ₉ , Gen Yin ₁ , Qiming Shao _{1,

10} , Peng Deng ₁ , Yingying Wu ₁ , Xiaoyang Liu ₁₁ , Xufeng Kou ₁₁ , Sahashi Masashi ₃ , Xiaodong Han ₆ , Christian Binek ₅ , Scott Chambers ₁₂ , Jing Xia ₄ , Kang L Wang _{1,

13,

14}

Affiliation

Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.
NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899-6102, USA.
Department of Electronic Engineering, Tohoku University, Sendai, 980-8579, Japan.
Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA.
Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA.
Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing, 100124, China.
International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China.
National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310-3706, USA.
Department of Materials Science, University of Tennessee, Knoxville, TN, 37996, USA.
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
School of Information Science and Technology, ShanghaiTech University, Shanghai, 200031, China.
Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99352, USA.
Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA.
Department of Physics, University of California, Los Angeles, CA, 90095, USA.

Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall effect in a magnetically‐doped topological insulator grown on the antiferromagnetic insulator Cr₂O₃. The exchange coupling between the two materials is investigated using field‐cooling‐dependent magnetometry and polarized neutron reflectometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr₂O₃ and the magnetic topological insulator, manifested as an exchange bias when the sample is field‐cooled under an out‐of‐plane magnetic field, and an exchange spring‐like magnetic depth profile when the system is magnetized within the film plane. These results identify antiferromagnetic insulators as suitable candidates for the manipulation of magnetic and topological order in topological insulator films.

中文翻译：

拓扑绝缘子/反铁磁体异质结构中量子异常霍尔效应和交换相互作用的观察。

量子异常霍尔绝缘体与磁性有序材料的集成提供了额外的自由度，通过该自由度可以控制所产生的奇异量子态。在这里，实验观察到了在反铁磁绝缘体Cr ₂ O ₃上生长的磁掺杂拓扑绝缘体中量子异常霍尔效应的报道。两种材料之间的交换耦合是通过磁场冷却相关的磁力测定法和极化中子反射测定法研究的。两种技术都揭示了Cr ₂ O ₃的反铁磁顺序之间的强界面相互作用磁拓扑绝缘体表现为当样品在平面外磁场下进行现场冷却时产生的交换偏压，以及当系统在薄膜平面内被磁化时产生的类似于交换弹簧的磁深度曲线。这些结果确定反铁磁绝缘体是用于操纵拓扑绝缘体膜中的磁性和拓扑顺序的合适候选物。

更新日期：2020-08-26

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