Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors,Advanced Electronic Materials

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Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-07-15 , DOI: 10.1002/aelm.202000072
Qihan Liu _{1,

2} , Chun Zhao _{1,

2} , Ivona Z. Mitrovic ₂ , Wangying Xu ₃ , Li Yang _{4,

5} , Ce Zhou Zhao _{1,

2}

Affiliation

Solution‐processed metal‐oxide thin films have been widely studied in low‐power and flexible electronics. However, the high temperature required to form a condensed and uniform film limits their applications in flexible and low‐cost electronics. Here, a novel and environmental‐friendly comproportionation reaction synthesis (CRS) is presented to obtain amorphous aluminum oxide (AlO_x ) thin films for solution‐processed thin‐film transistors (TFTs) employing water as the precursor solvent. The thermal decomposition of CRS‐AlO_x precursor is completed at ≈300 °C, which is 100 °C lower than that of the conventional water‐induced AlO_x . The morphological, optical, compositional, and electrical properties of CRS‐AlO_x dielectric films are studied systematically. Meanwhile, TFTs based on water‐induced In₂O₃ metal oxide semiconductor layers deposited on these dielectrics at low temperatures are formed and characterized. Compared with TFTs based on conventional AlO_x showing low mobility and low clockwise hysteresis, In₂O₃ TFTs based on CRS‐AlO_x exhibit improved electrical performance and counterclockwise hysteresis in the transfer curves. Water‐induced TFTs fabricated on CRS‐AlO_x formed at a low temperature of 250 °C have average mobility of 98 cm² V⁻¹ s⁻¹. Through chemical composition characterization and electrical characterization, the high mobilities of TFTs based on CRS‐AlO_x dielectrics are correlated to trap states, which resulted in counterclockwise hysteresis in the transfer curves.

中文翻译：

配合反应合成实现高性能水诱导金属氧化物薄膜晶体管

固溶处理的金属氧化物薄膜已在低功率和柔性电子领域得到了广泛的研究。但是，形成凝结而均匀的薄膜所需的高温限制了它们在柔性低成本电子产品中的应用。在此，提出了一种新颖且环保的补偿反应合成法（CRS），用于获得非晶态氧化铝（AlO _x ）薄膜，用于以水为前体溶剂的固溶处理薄膜晶体管（TFT）。CRS-AlO _x 前体的热分解在≈300°C时完成，比常规水诱导的AlO _x 的热分解低100°C 。CRS‐AlO _x的形态，光学，组成和电学性质对介电膜进行了系统的研究。同时，形成并表征了基于低温沉积在这些电介质上的水诱导的In ₂ O ₃金属氧化物半导体层的TFT 。与显示低迁移率和低顺时针滞后性的基于常规AlO _x的 TFT相比，基于CRS-AlO _x的In ₂ O ₃ TFT在传输曲线中显示出改进的电气性能和逆时针滞后性。在250°C的低温下在CRS‐AlO _x上制造的水诱导TFT的平均迁移率为98 cm ² V ^-1 s ^-1 。通过化学成分表征和电学表征，基于CRS-AlO _x 电介质的TFT的高迁移率与陷阱态相关，这导致了传输曲线中的逆时针滞后。

更新日期：2020-08-10

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