Etched graphite felt (EGF) was successfully fabricated using in situ CoO_X etching process and used as a cathode to degrade diuron in the electro-Fenton (E-Fenton) process. The graphite felt prepared using the in situ CoO_X etching process could markedly enhance the electrochemical properties with high electroactive surface area and rapid electron transfer capacity. Due to the high content of defects and porous structure, EGF electrode exhibited superior performance with high yield of hydrogen peroxide and rapid regeneration capacity of Fe²⁺, achieving 100% removal of diuron (20 mg/L) at −0.7 V/SCE within 50 min. In addition, the stability of the EGF cathode showed no significant decay in the performance after 35 cycles. EGF electrode had achieved good degradation effect for different pollutants, such as atrazine, amoxicillin, atenolol and 2, 4, 6-trichlorophenol. In three runs, the EGF cathode showed low Co leaching (<1 ppm). Moreover, the possible degradation pathways of diuron were proposed by analyzing the intermediates in this work. The results obtained in this work highlight the potential of EGF electrode for use as an E-Fenton cathode.

使用原位CoO _X蚀刻工艺成功制造了蚀刻石墨毡（EGF），并用作阴极以在电Fenton（E-Fenton）工艺中降解杜伦。采用原位CoO _X刻蚀工艺制备的石墨毡可以显着提高电化学性能，具有较高的电活性表面积和快速的电子传递能力。由于缺陷和多孔结构的含量很高，EGF电极表现出优异的性能，具有高的过氧化氢收率和快速的Fe ²⁺再生能力，在50分钟内在-0.7 V / SCE时100％去除了敌草隆（20 mg / L）。另外，EGF阴极的稳定性在35个循环后没有表现出明显的性能下降。EGF电极对阿特拉津，阿莫西林，阿替洛尔和2,4,6-三氯苯酚等不同污染物均具有良好的降解效果。在三个运行中，EGF阴极显示出低的Co浸出（<1 ppm）。此外，通过分析这项工作中的中间体，提出了敌草隆可能的降解途径。在这项工作中获得的结果突出了用作E-Fenton阴极的EGF电极的潜力。