Ga2O3多晶型物：调整外延生长条件,Journal of Materials Chemistry C

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Ga2O3多晶型物：调整外延生长条件
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-07-14 , DOI: 10.1039/d0tc02743j
M. Bosi _{1,

2,

3} , P. Mazzolini _{2,

3,

4,

5,

6} , L. Seravalli _{1,

2,

3} , R. Fornari _{1,

2,

3,

4,

5}

Affiliation

氧化镓是一种宽带隙n型半导体，对光电子应用（例如，电力电子和太阳盲UV光电探测器）非常感兴趣。Ga ₂ O ₃除了具有最热力学上稳定的单斜晶β相外，还可以结晶成不同的多晶型。其中刚玉α相和正交相ε相是最有前途的。在这篇综述中，我们集中于促进这些Ga ₂ O ₃多晶型物成核和稳定生长的主要方面。特别强调的是考虑到ε相，因为它是最近越来越多的关注在科学界，因为：（i）该更高的晶格对称的相对的β-Ga ₂ Ø ₃，这可能有助于实现异质结构，（ii）在廉价的蓝宝石衬底上生长的可能性，以及（iii）其独特的压电特性。同时的β-Ga的生长₂ ö ₃被广泛地研究和理解的化学和物理方面，其允许亚稳Ga构成的稳定的透彻和全面的分析₂ ö ₃相用不同合成方法仍然缺少。因此，本综述旨在通过分析几种生长技术（MOVPE，HVPE，薄雾CVD，MBE和PLD）的相关生长参数来填补这一空白，强调相似点和不同点，寻找一个统一的框架来理解生长和Ga _2的成核O ₃多晶型物。总之，我们重点介绍了使用所有讨论的薄膜生长技术沉积不同Ga ₂ O ₃多晶型物的实用指南。

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Ga2O3 polymorphs: tailoring the epitaxial growth conditions

Gallium oxide is a wide bandgap n-type semiconductor highly interesting for optoelectronic applications (e.g., power electronics and solar blind UV photodetectors). Besides its most thermodynamically stable monoclinic β phase, Ga₂O₃ can crystallize in different polymorphs; among them the corundum α and the orthorhombic ε phases are the most promising ones. In this review we focus on the main aspects that promote the nucleation and stable growth of these Ga₂O₃ polymorphs. Particular emphasis is given to the ε phase since it is recently gaining increasing attention in the scientific community because of: (i) its higher lattice symmetry with respect to β-Ga₂O₃, which could favour the realization of heterostructures, (ii) the possibility to be grown on cheap sapphire substrates and (iii) its peculiar piezoelectric properties. While the growth of β-Ga₂O₃ is widely studied and understood, a thorough and comprehensive analysis of the chemical and physical aspects that allow for the stabilization of the metastable Ga₂O₃ phases with different synthesis methods is still missing. Therefore, the present review aims at filling this gap, by analysing the relevant growth parameters for several growth techniques (MOVPE, HVPE, mist-CVD, MBE, and PLD), highlighting similarities and differences, looking for a unified framework to understand the growth and nucleation of different Ga₂O₃ polymorphs. As a conclusion, we highlight practical guidelines for the deposition of the different Ga₂O₃ polymorphs with all the discussed thin film growth techniques.

更新日期：2020-08-21

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