Abstract We propose a vapour-liquid-solid (VLS)-like growth by alternately depositing nanoscale precursors of film and liquid flux using a pulsed laser deposition system with rapid beam deflection (RBD-PLD). The nanoscale alternating deposition of NiSi2 and SiC precursors on a 4H-SiC substrate at 1000 °C was found to suppress the formation of stacking faults and the carbon aggregates in the fabricated SiC films. As a result, the growth of high-quality 3C-SiC films having a flat surface with a step-and-terrace structure was achieved under the optimized conditions. The advantage of this process is that the required amount of the NiSi2 flux can be much reduced as compared to in the conventional VLS process; e.g., it could be as small as 5 vol% in volume ratio to the thin film SiC in the present case. The high crystallinity of the fabricated 3C-SiC thin films was also supported by their high visible photocurrent response ratio. The mechanism of the vapour-liquid-solid (VLS)-like growth is also discussed.

中文翻译：

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SiC和NiSi2纳米级交替沉积薄膜SiC的汽-液-固样生长

摘要 我们通过使用具有快速光束偏转 (RBD-PLD) 的脉冲激光沉积系统交替沉积薄膜和液体通量的纳米级前体，提出了一种类似汽液固 (VLS) 的生长。发现 NiSi2 和 SiC 前驱体在 1000°C 下在 4H-SiC 衬底上的纳米级交替沉积可以抑制堆垛层错的形成和制造的 SiC 薄膜中的碳聚集体。结果，在优化条件下实现了具有台阶和平台结构的平坦表面的高质量3C-SiC薄膜的生长。该工艺的优点是与传统的 VLS 工艺相比，所需的 NiSi2 助焊剂量可以大​​大减少；例如，在目前的情况下，它与薄膜 SiC 的体积比可以小到 5 体积％。所制造的 3C-SiC 薄膜的高结晶度也得到其高可见光光电流响应比的支持。还讨论了汽-液-固 (VLS) 样生长的机制。