Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells,Physica Status Solidi (A) - Applications and Materials Science

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Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-07-04 , DOI: 10.1002/pssa.202000348
Kortan Öğütman _{1,

2,

3} , Nafis Iqbal _{4,

5} , Geoffrey Gregory _{4,

5} , Mengjie Li _{4,

5} , Michael Haslinger ₆ , Emanuele Cornagliotti ₇ , Winston V. Schoenfeld _{1,

2,

3,

4,

5} , Joachim John ₈ , Kristopher O. Davis _{2,

3,

4,

5}

Affiliation

Herein, tunneling aluminum oxide (Al₂O₃) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron‐doped surface. These very thin Al₂O₃ films (1.5–3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110–115 Ω □⁻¹) hydrophilic surfaces operating as metal–insulator–semiconductor (MIS) contacts. The emitter saturation current density values of ≈57 fA cm⁻² are achieved for the Al₂O₃ film thicknesses of 2 nm before metallization. At this same thickness, the contact resistivity values of 33 mΩ cm² are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al₂O₃ used to create these MIS structures are all performed with industrially relevant equipment on Cz wafers.

中文翻译：

氧化铝作为钝化空穴接触用于硅太阳能电池的空间原子层沉积

在此，隧道氧化铝（Al ₂ O ₃）钝化层被证明是空穴收集的候选者，当与掺硼表面耦合时，钝化接触成为可能。这些极薄的Al ₂ O ₃膜（1.5–3 nm）是通过空间原子层沉积（ALD）在硼扩散的（110–115Ω□ ^-1）亲水表面上沉积的，该亲水表面用作金属-绝缘体-半导体（MIS）触点。在金属化之前，对于2 nm的Al ₂ O ₃膜厚度，可获得约57 fA cm ^-2的发射极饱和电流密度值。在相同的厚度下，接触电阻率值为33mΩcm ²在金属化之后获得。最重要的是，用于制造这些MIS结构的Al ₂ O ₃的硼扩散，化学湿法表面制备和空间ALD都是通过与工业相关的设备在Cz晶圆上完成的。

更新日期：2020-07-04

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