使用蒸气氢氟酸在SiO2上的MoS2中晶粒边界的快速且大面积可视化。,ACS Applied Materials & Interfaces

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使用蒸气氢氟酸在SiO2上的MoS2中晶粒边界的快速且大面积可视化。
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-07-03 , DOI: 10.1021/acsami.0c06910
Xuge Fan ₁ , Rita Siris ₂ , Oliver Hartwig ₂ , Georg S Duesberg ₂ , Frank Niklaus ₁

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二维（2D）材料层中的晶界对其电气，光电和机械性能有影响。因此，简单的大面积表征方法的可用性至关重要，该方法可以直接可视化二维材料（例如二硫化钼（MoS ₂））中的晶粒和晶界。在MoS ₂中可视化晶粒和晶界的先前方法通常基于原子分辨率显微镜或光学成像技术（即拉曼光谱或光致发光），这些技术复杂或仅限于表征微小的微米级区域。在这里，我们展示了一种简单的方法，用于有效地大面积可视化连续化学气相沉积膜和MoS域中的晶界₂被上的二氧化硅生长（SIO ₂）衬底。在我们的方法中，MOS ₂由SiO上层₂ / Si衬底暴露于蒸汽氢氟酸（VHF），从而导致差的SiO蚀刻₂在所述MOS ₂的晶界和SiO ₂与MOS下方_2个晶粒作为结果VHF扩散穿过晶界处MoS ₂层中的缺陷的现象。SiO ₂可以看到晶界的位置使用光学显微镜，扫描电子显微镜或拉曼光谱的图案。该方法可以简单，快速地评估大面积2D材料膜中的晶粒尺寸，从而有可能促进合成工艺的优化，并促进2D材料在科学技术中的应用。

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Rapid and Large-Area Visualization of Grain Boundaries in MoS2 on SiO2 Using Vapor Hydrofluoric Acid.

Grain boundaries in two-dimensional (2D) material layers have an impact on their electrical, optoelectronic, and mechanical properties. Therefore, the availability of simple large-area characterization approaches that can directly visualize grains and grain boundaries in 2D materials such as molybdenum disulfide (MoS₂) is critical. Previous approaches for visualizing grains and grain boundaries in MoS₂ are typically based on atomic resolution microscopy or optical imaging techniques (i.e., Raman spectroscopy or photoluminescence), which are complex or limited to the characterization of small, micrometer-sized areas. Here, we show a simple approach for an efficient large-area visualization of the grain boundaries in continuous chemical vapor-deposited films and domains of MoS₂ that are grown on a silicon dioxide (SiO₂) substrate. In our approach, the MoS₂ layer on a SiO₂/Si substrate is exposed to vapor hydrofluoric acid (VHF), resulting in the differential etching of SiO₂ at the MoS₂ grain boundaries and SiO₂ underneath the MoS₂ grains as a result of VHF diffusing through the defects in the MoS₂ layer at the grain boundaries. The location of the grain boundaries can be seen by the resulting SiO₂ pattern using optical microscopy, scanning electron microscopy, or Raman spectroscopy. This method allows for a simple and rapid evaluation of grain sizes in 2D material films over large areas, thereby potentially facilitating the optimization of synthesis processes and advancing applications of 2D materials in science and technology.

更新日期：2020-07-29

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