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InP Quantum Dots: Synthesis and Lighting Applications.
Small ( IF 13.0 ) Pub Date : 2020-07-01 , DOI: 10.1002/smll.202002454 Bing Chen 1, 2 , Dongyu Li 1, 3 , Feng Wang 1, 2
Small ( IF 13.0 ) Pub Date : 2020-07-01 , DOI: 10.1002/smll.202002454 Bing Chen 1, 2 , Dongyu Li 1, 3 , Feng Wang 1, 2
Affiliation
InP quantum dots (QDs) are typical III–V group semiconductor nanocrystals that feature large excitonic Bohr radius and high carrier mobility. The merits of InP QDs include large absorption coefficient, broad color tunability, and low toxicity, which render them promising alternatives to classic Cd/Pb‐based QDs for applications in practical settings. Over the past two decades, the advances in wet‐chemistry methods have enabled the synthesis of small‐sized colloidal InP QDs with the assistance of organic ligands. By proper selection of synthetic protocols and precursor materials coupled with surface passivation, the QYs of InP QDs are pushed to near unity with modest color purity. The state‐of‐the‐art InP QDs with appealing optical and electronic properties have excelled in many applications with the potential for commercialization. This work focuses on the recent development of wet‐chemistry protocols and various precursor materials for the synthesis and surface modification of InP QDs. Current methods for constructing light‐emitting diodes using novel InP‐based QDs are also summarized.
中文翻译:
InP量子点:合成和照明应用。
InP量子点(QD)是典型的III–V族半导体纳米晶体,具有大的激子玻尔半径和高的载流子迁移率。InP QD的优点包括大吸收系数,宽泛的颜色可调性和低毒性,这使其成为有希望替代基于Cd / Pb的经典QD的理想选择,可用于实际环境。在过去的二十年中,湿化学方法的进步使得能够借助有机配体合成小型胶体InP QD。通过加上表面钝化的合成方案和前体材料的适当选择,的InP量子点的QYS被推到具有适度的色纯度接近统一。具有吸引人的光学和电子特性的最先进的InP QD在许多具有商业化潜力的应用中均表现出色。这项工作着眼于湿化学方案和用于InP QD合成和表面修饰的各种前体材料的最新发展。还总结了使用新颖的基于InP的QD构造发光二极管的当前方法。
更新日期:2020-08-14
中文翻译:
InP量子点:合成和照明应用。
InP量子点(QD)是典型的III–V族半导体纳米晶体,具有大的激子玻尔半径和高的载流子迁移率。InP QD的优点包括大吸收系数,宽泛的颜色可调性和低毒性,这使其成为有希望替代基于Cd / Pb的经典QD的理想选择,可用于实际环境。在过去的二十年中,湿化学方法的进步使得能够借助有机配体合成小型胶体InP QD。通过加上表面钝化的合成方案和前体材料的适当选择,的InP量子点的QYS被推到具有适度的色纯度接近统一。具有吸引人的光学和电子特性的最先进的InP QD在许多具有商业化潜力的应用中均表现出色。这项工作着眼于湿化学方案和用于InP QD合成和表面修饰的各种前体材料的最新发展。还总结了使用新颖的基于InP的QD构造发光二极管的当前方法。