Synthesis of Atomically Thin 1T‐TaSe2 with a Strongly Enhanced Charge‐Density‐Wave Order,Advanced Functional Materials

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Synthesis of Atomically Thin 1T‐TaSe2 with a Strongly Enhanced Charge‐Density‐Wave Order
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-07-01 , DOI: 10.1002/adfm.202001903
Hong Wang ₁ , Yu Chen ₂ , Chao Zhu ₃ , Xuewen Wang ₄ , Hongbo Zhang ₂ , Siu Hon Tsang ₅ , Hongling Li ₁ , Jinjun Lin ₁ , Ting Yu ₂ , Zheng Liu ₃ , Edwin Hang Tong Teo _{1,

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Affiliation

Bulk 1T‐TaSe₂ as a charge‐density‐wave (CDW) conductor is of special interest for CDW‐based nanodevice applications because of its high CDW transition temperature. Reduced dimensionality of the strongly correlated material is expected to result in significantly different collective properties. However, the growth of atomically thin 1T‐TaSe₂ crystals remains elusive, thus hampering studies of dimensionality effects on the CDW of the material. Herein, chemical vapor deposition (CVD) of atomically thin TaSe₂ crystals is reported with controlled 1T phase. Scanning transmission electron microscopy suggests the high crystallinity and the formation of CDW superlattice in the ultrathin 1T‐TaSe₂ crystals. The commensurate–incommensurate CDW transition temperature of the grown 1T‐TaSe₂ increases with decreasing film thickness and reaches a value of 570 K in a 3 nm thick layer, which is 97 K higher than that of previously reported bulk 1T‐TaSe₂. This work enables the exploration of collective phenomena of 1T‐TaSe₂ in the 2D limit, as well as offers the possibility of utilizing the high‐temperature CDW films in ultrathin phase‐change devices.

中文翻译：

原子稀薄的1T-TaSe2的合成，具有强烈增强的电荷密度-波序

体积大的1T-TaSe ₂作为电荷密度波（CDW）导体因其CDW转变温度高而特别受到基于CDW的纳米器件应用的关注。降低高度相关材料的尺寸预计会导致明显不同的集合特性。然而，原子薄的1T-TaSe ₂晶体的生长仍然难以捉摸，因此妨碍了对材料CDW的尺寸效应的研究。在此，据报道原子薄的TaSe ₂晶体的化学气相沉积（CVD）具有受控的1T相。扫描透射电子显微镜显示超薄1T-TaSe _2中的高结晶度和CDW超晶格的形成晶体。生长的1T-TaSe ₂的相应的-不相称的CDW转变温度随着膜厚度的减小而增加，在3 nm厚的层中达到570 K，比先前报道的本体1T-TaSe _2的值高97K 。这项工作使得能够在2D极限范围内探索1T-TaSe ₂的集体现象，并为在超薄相变设备中利用高温CDW膜提供了可能性。

更新日期：2020-08-19

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