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Optical, Electronic, and Contact Properties of Janus-MoSO/MoS2 Heterojunction
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-06-30 , DOI: 10.1021/acs.jpcc.0c04042
Tao Wang 1, 2 , Min Su 2 , Hao Jin 2 , Jianwei Li 2 , Langhui Wan 2 , Yadong Wei 1, 2
Affiliation  

Although oxidization is usually believed to have a negative effect on material performance, oxygen atoms may play a special role in oxidized two-dimensional (2D) transition-metal dichalcogenides (TMDs). In this work, we systematically study the optical, electronic, and contact properties of Janus-MoSO/MoS2 heterojunctions. Our results show that when a MoS2 monolayer becomes a Janus-MoSO monolayer, a vertical intrinsic electric field appears because of the discrepancy of electronegativity between S and O atoms. If this oxidation process takes place in a bilayer MoS2, an asymmetric heterojunction is formed. Janus-MoSO/MoS2 shows type-II band alignment with an extremely small exciton binding energy, which facilitates the photoinduced electron and hole separation. In addition, when the electrode Au contacts with the bilayer MoS2, a Schottky barrier is usually observed, whereas this barrier vanishes when Au contacts with Janus-MoSO/MoS2, thus improving the device performance. We believe that the proposed structure based on Janus-MoSO may significantly improve the performance of TMD materials, which thereby guide the designing of two-dimensional nanodevices.

中文翻译:

Janus-MoSO / MoS 2异质结的光学,电子和接触特性

尽管通常认为氧化会对材料性能产生负面影响,但是氧原子可能在氧化的二维(2D)过渡金属二卤化金属(TMD)中起特殊作用。在这项工作中,我们系统地研究了Janus-MoSO / MoS 2异质结的光学,电子和接触特性。我们的结果表明,当MoS 2单层变成Janus-MoSO单层时,由于S和O原子之间的电负性差异,会出现垂直固有电场。如果该氧化过程在双层MoS 2中进行,则会形成不对称的异质结。Janus-MoSO / MoS 2图2显示了具有极小的激子结合能的II型能带排列,这有利于光致电子和空穴的分离。另外,当电极Au与双层MoS 2接触时,通常观察到肖特基势垒,而当Au与Janus-MoSO / MoS 2接触时该势垒消失,从而改善了器件性能。我们认为,基于Janus-MoSO的拟议结构可以显着提高TMD材料的性能,从而指导二维纳米器件的设计。
更新日期:2020-07-23
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