Interface-driven topological Hall effect in SrRuO3-SrIrO3 bilayer.,Science Advances

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Interface-driven topological Hall effect in SrRuO3-SrIrO3 bilayer.
Science Advances ( IF 11.7 ) Pub Date : 2016-07-01 , DOI: 10.1126/sciadv.1600304
Jobu Matsuno ₁ , Naoki Ogawa ₁ , Kenji Yasuda ₂ , Fumitaka Kagawa ₁ , Wataru Koshibae ₁ , Naoto Nagaosa _{1,

2} , Yoshinori Tokura _{1,

2} , Masashi Kawasaki _{1,

2}

Affiliation

Electron transport coupled with magnetism has attracted attention over the years. Among them, recently discovered is topological Hall effect (THE), originating from scalar spin chirality, that is, the solid angle subtended by the spins. THE is found to be a promising tool for probing the Dzyaloshinskii-Moriya (DM) interaction and consequent magnetic skyrmions. This interaction arises from broken inversion symmetry and hence can be artificially introduced at interface; this concept is lately verified in metal multilayers. However, there are few attempts to investigate such DM interaction at interface through electron transport. We clarified how the transport properties couple with interface DM interaction by fabricating the epitaxial oxide interface. We observed THE in epitaxial bilayers consisting of ferromagnetic SrRuO3 and paramagnetic SrIrO3 over a wide region of both temperature and magnetic field. The magnitude of THE rapidly decreases with the thickness of SrRuO3, suggesting that the interface DM interaction plays a significant role. Such interaction is expected to realize a 10-nm-sized Néel-type magnetic skyrmion. The present results established that the high-quality oxide interface enables us to tune the effective DM interaction; this can be a step toward future topological electronics.

中文翻译：

SrRuO3-SrIrO3双层中的界面驱动拓扑霍尔效应。

多年来，电子传输与磁性相结合引起了人们的关注。其中，最近发现的是拓扑霍尔效应（THE），其起源于标量自旋手性，即自旋所具有的立体角。人们发现THE是探测Dzyaloshinskii-Moriya（DM）相互作用和随之而来的磁性天生离子的有前途的工具。这种相互作用源于反演对称性的破坏，因此可以人为地引入界面。这个概念最近在金属多层板中得到了验证。但是，很少有研究通过电子传输在界面上发生这种DM相互作用的尝试。我们通过制造外延氧化物界面阐明了传输特性如何与界面DM相互作用耦合。我们在由铁磁SrRuO3和顺磁SrIrO3组成的外延双层中，在宽广的温度和磁场范围内观察到了THE。随着SrRuO3的厚度，THE的大小迅速减小，这表明界面DM相互作用起着重要作用。预期这种相互作用将实现10 nm大小的Néel型磁性天rm。目前的结果表明，高质量的氧化物界面使我们能够调节有效的DM相互作用。这可能是迈向未来拓扑电子学的一步。目前的结果表明，高质量的氧化物界面使我们能够调节有效的DM相互作用。这可能是迈向未来拓扑电子学的一步。目前的结果表明，高质量的氧化物界面使我们能够调节有效的DM相互作用。这可能是迈向未来拓扑电子学的一步。

更新日期：2016-07-13

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