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Synthesis of Wafer-Scale Monolayer Pyrenyl Graphdiyne on Ultrathin Hexagonal Boron Nitride for Multibit Optoelectronic Memory.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-06-26 , DOI: 10.1021/acsami.0c05327 Xing-Han Wang 1 , Zhi-Cheng Zhang 1 , Jing-Jing Wang 1 , Xu-Dong Chen 1 , Bin-Wei Yao 1 , Ya-Xin Hou 1 , Mei-Xi Yu 1 , Yuan Li 1 , Tong-Bu Lu 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-06-26 , DOI: 10.1021/acsami.0c05327 Xing-Han Wang 1 , Zhi-Cheng Zhang 1 , Jing-Jing Wang 1 , Xu-Dong Chen 1 , Bin-Wei Yao 1 , Ya-Xin Hou 1 , Mei-Xi Yu 1 , Yuan Li 1 , Tong-Bu Lu 1
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Graphdiyne is a new two-dimensional carbon allotrope with many attractive properties and has been widely used in various applications. However, the synthesis of large-area, high-quality, and ultrathin (especially monolayer) graphdiyne and its analogues remains a challenge, hindering its application in optoelectronic devices. Here, a wafer-scale monolayer pyrenyl graphdiyne (Pyr-GDY) film is obtained on hexagonal boron nitride (hBN) via a van der Waals epitaxial strategy, and top-floating-gated multibit nonvolatile optoelectronic memory based on Pyr-GDY/hBN/graphene is constructed, using Pyr-GDY as a photoresponsive top-floating gate. Benefiting from the excellent charge trapping capability and strong absorption of the graphdiyne film, as well as the top-floating-gated structure and the ultrathin hBN film used in the device, the optoelectronic memory exhibits high storage performance and robust reliability. A huge difference in the current between the programmed and erased states (>26 μA μm–1 at Vds = 0.1 V) and a prolonged retention time (>105 s) enable the device to achieve multibit storage, for which eight and nine distinct storage levels (3-bit) are obtained by applying periodic gate voltages and optical pulses in the programming and erasing processes, respectively. This work provides an important step toward realizing versatile graphdiyne-based optoelectronic devices in the future.
中文翻译：
在超薄六方氮化硼上制备用于多位光电存储器的晶圆级单层enyl烯基石墨二炔。
Graphdiyne是一种具有许多吸引人的特性的新型二维碳同素异形体，已被广泛用于各种应用中。然而，大面积，高质量和超薄（特别是单层）石墨二炔及其类似物的合成仍然是一个挑战，阻碍了其在光电器件中的应用。在这里，通过范德华斯外延策略在六方氮化硼（hBN）上获得了晶圆级单层pyr基石墨烯（Pyr-GDY）膜，并基于Pyr-GDY / hBN /进行了顶部浮动门控多位非易失性光电存储石墨烯是使用Pyr-GDY作为光响应顶部浮置栅极构造的。受益于石墨二炔薄膜的出色电荷捕获能力和强吸收性，以及器件中使用的顶部浮动栅极结构和超薄hBN薄膜，光电存储器具有很高的存储性能和强大的可靠性。编程状态和擦除状态之间的电流差异很大（> 26μAμm在V ds = 0.1 V时为–1，延长的保留时间（> 10 5 s）使该器件能够实现多位存储，为此，通过施加周期性的栅极电压和光，可以获得八种和九种不同的存储电平（3位）在编程和擦除过程中分别产生脉冲。这项工作为将来实现多功能的基于石墨二炔的光电器件迈出了重要的一步。
更新日期：2020-07-22
中文翻译：
在超薄六方氮化硼上制备用于多位光电存储器的晶圆级单层enyl烯基石墨二炔。
Graphdiyne是一种具有许多吸引人的特性的新型二维碳同素异形体，已被广泛用于各种应用中。然而，大面积，高质量和超薄（特别是单层）石墨二炔及其类似物的合成仍然是一个挑战，阻碍了其在光电器件中的应用。在这里，通过范德华斯外延策略在六方氮化硼（hBN）上获得了晶圆级单层pyr基石墨烯（Pyr-GDY）膜，并基于Pyr-GDY / hBN /进行了顶部浮动门控多位非易失性光电存储石墨烯是使用Pyr-GDY作为光响应顶部浮置栅极构造的。受益于石墨二炔薄膜的出色电荷捕获能力和强吸收性，以及器件中使用的顶部浮动栅极结构和超薄hBN薄膜，光电存储器具有很高的存储性能和强大的可靠性。编程状态和擦除状态之间的电流差异很大（> 26μAμm在V ds = 0.1 V时为–1，延长的保留时间（> 10 5 s）使该器件能够实现多位存储，为此，通过施加周期性的栅极电压和光，可以获得八种和九种不同的存储电平（3位）在编程和擦除过程中分别产生脉冲。这项工作为将来实现多功能的基于石墨二炔的光电器件迈出了重要的一步。
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