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Photoresponse-Bias Modulation of a High-Performance MoS2 Photodetector with a Unique Vertically Stacked 2H-MoS2/1T@2H-MoS2 Structure.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-06-25 , DOI: 10.1021/acsami.0c04048 Wenzhao Wang 1 , Xiangbin Zeng 1 , Jamie H Warner 2 , Zhengyu Guo 1 , Yishuo Hu 1 , Yang Zeng 1 , Jingjing Lu 1 , Wen Jin 3, 4 , Shibo Wang 1 , Jichang Lu 1 , Yirong Zeng 1 , Yonghong Xiao 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-06-25 , DOI: 10.1021/acsami.0c04048 Wenzhao Wang 1 , Xiangbin Zeng 1 , Jamie H Warner 2 , Zhengyu Guo 1 , Yishuo Hu 1 , Yang Zeng 1 , Jingjing Lu 1 , Wen Jin 3, 4 , Shibo Wang 1 , Jichang Lu 1 , Yirong Zeng 1 , Yonghong Xiao 1
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Monolayer 2H-phase MoS2-based photodetectors exhibit high photon absorption but suffer from low photoresponse, which severely limits their applications in optoelectronic fields. The metallic 1T phase of MoS2, while transporting carriers faster, shows negligible response to visible light, which limits its usage in photodetectors. Herein, we propose an ultrafast-response MoS2-based photodetector having a channel that consists of a 2H-MoS2 sensitizing monolayer on top of 1T@2H-MoS2. The 1T@2H-MoS2 layer has a thickness of several nanometers and is a mixture of metallic 1T-MoS2 and semiconducting 2H-MoS2, imparting metal-like properties to the photodetector. Compared with the monolayer 2H-MoS2 photodetector, we observed a drastic increase in the photoresponse of the 2H-MoS2/1T@2H-MoS2 vertically stacked photodetector to a value of 1917 A W–1. Owing to the presence of metallic 1T-MoS2 within the metal-like 1T@2H-MoS2, the performance of the 2H-MoS2/1T@2H-MoS2 vertically stacked photodetector is voltage bias-modulated with an external quantum efficiency (EQE) of up to 448,384% and a specific detectivity of up to ∼1011 Jones. The higher carrier density and higher mobility of the 1T@2H-MoS2 layer explain the better bias-modulated performance. In addition, the interface between 2H-MoS2 and 1T@2H-MoS2 ensures fewer dangling bonds and reduced lattice mismatching. Thus, this study presents an exclusive vertically stacked MoS2-based photodetector that lays the foundation for the development of photodetectors exhibiting higher photoresponse.
中文翻译：
具有独特的垂直堆叠2H-MoS2 / 1T @ 2H-MoS2结构的高性能MoS2光电探测器的光响应偏置调制。
基于单层2H相MoS 2的光电探测器表现出高的光子吸收率，但光响应低，这严重限制了它们在光电领域的应用。MoS 2的金属1T相虽然可以更快地传输载流子，但对可见光的响应却可以忽略不计，这限制了它在光电探测器中的使用。本文中，我们提出了一种基于超快响应MoS 2的光电探测器，该探测器的通道由1T @ 2H-MoS 2顶部的2H-MoS 2敏化单层组成。1T @ 2H-MoS 2层的厚度为几纳米，是金属1T-MoS 2和半导体2H-MoS 2的混合物，赋予光电探测器类似金属的特性。与单层2H-MoS 2光电探测器相比，我们观察到垂直堆叠的2H-MoS 2 / 1T @ 2H-MoS 2光电探测器的光响应急剧增加，达到1917 AW –1的值。由于在类金属1T @ 2H-MoS 2中存在金属1T-MoS 2，因此垂直堆叠的2H-MoS 2 / 1T @ 2H-MoS 2光电探测器的性能受到外部量子效率的电压偏置调制。 （EQE）高达448,384％，比探测率高达〜10 11 Jones。1T @ 2H-MoS 2的更高载流子密度和更高迁移率层说明了更好的偏置调制性能。此外，2H-MoS 2和1T @ 2H-MoS 2之间的界面可确保更少的悬空键并减少晶格失配。因此，本研究提出了一种专有的垂直堆叠的基于MoS 2的光电探测器，为开发具有更高光响应的光电探测器奠定了基础。
更新日期：2020-06-25
中文翻译：
具有独特的垂直堆叠2H-MoS2 / 1T @ 2H-MoS2结构的高性能MoS2光电探测器的光响应偏置调制。
基于单层2H相MoS 2的光电探测器表现出高的光子吸收率，但光响应低，这严重限制了它们在光电领域的应用。MoS 2的金属1T相虽然可以更快地传输载流子，但对可见光的响应却可以忽略不计，这限制了它在光电探测器中的使用。本文中，我们提出了一种基于超快响应MoS 2的光电探测器，该探测器的通道由1T @ 2H-MoS 2顶部的2H-MoS 2敏化单层组成。1T @ 2H-MoS 2层的厚度为几纳米，是金属1T-MoS 2和半导体2H-MoS 2的混合物，赋予光电探测器类似金属的特性。与单层2H-MoS 2光电探测器相比，我们观察到垂直堆叠的2H-MoS 2 / 1T @ 2H-MoS 2光电探测器的光响应急剧增加，达到1917 AW –1的值。由于在类金属1T @ 2H-MoS 2中存在金属1T-MoS 2，因此垂直堆叠的2H-MoS 2 / 1T @ 2H-MoS 2光电探测器的性能受到外部量子效率的电压偏置调制。 （EQE）高达448,384％，比探测率高达〜10 11 Jones。1T @ 2H-MoS 2的更高载流子密度和更高迁移率层说明了更好的偏置调制性能。此外，2H-MoS 2和1T @ 2H-MoS 2之间的界面可确保更少的悬空键并减少晶格失配。因此，本研究提出了一种专有的垂直堆叠的基于MoS 2的光电探测器，为开发具有更高光响应的光电探测器奠定了基础。
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