Tuning the Electrical State of 2DEG at LaVO3−KTaO3 Interface: Effect of Light and Electrostatic Gate,Advanced Materials Interfaces

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Tuning the Electrical State of 2DEG at LaVO3−KTaO3 Interface: Effect of Light and Electrostatic Gate
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-06-17 , DOI: 10.1002/admi.202000646
Saveena Goyal ₁ , Neha Wadehra ₁ , Suvankar Chakraverty ₁

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Two‐dimensional electron gas (2DEG) formed at the interface of perovskite oxides has drawn considerable interest due to its rich underlying physics and potential in future generation spin‐electronic devices. Electrostatic gating and light illumination are two frequently applied stimuli for such devices. In this work, electrical conductivity tuning of a recently discovered conducting interface of crystalline LaVO₃ and KTaO₃ (LVO−KTO) is reported through electrostatic gating as well as light illumination. Signature of significant photoconductivity as well as persistent photocurrent is observed. A giant enhancement of resistance is found to occur under light illumination when a negative electrostatic gate bias (V_G > −8 V) is applied. These effects offer a possible control on carrier density of the oxide interface, which is otherwise difficult due to their huge intrinsic carrier density. Further, a protocol deploying light and gate bias in an appropriate sequence is demonstrated to use this interface as a possible optical‐switch or memory storage device.

中文翻译：

调整LaVO3-KTaO3接口上2DEG的电状态：光和静电门的影响

钙钛矿氧化物界面处形成的二维电子气（2DEG）由于其丰富的基础物理特性和在下一代自旋电子器件中的潜力而备受关注。静电门控和光照明是这种设备经常使用的两种刺激。在这项工作中，通过静电门控和光照射报道了最近发现的晶体LaVO ₃和KTaO ₃（LVO-KTO）的导电界面的电导率调节。观察到显着的光电导性以及持久的光电流的签名。当负的静电门偏压（V _G> -8 V）。这些效果可以控制氧化物界面的载流子密度，否则由于其巨大的固有载流子密度而很难控制。此外，还演示了以适当顺序部署光和栅极偏置的协议，可以将该接口用作可能的光开关或内存存储设备。

更新日期：2020-06-17

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