Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2,The Journal of Physical Chemistry C

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Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO2 and SiO2
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-06-16 , DOI: 10.1021/acs.jpcc.0c03605
Elena O. Filatova ₁ , Aleksei S. Konashuk ₁ , Sergei S. Sakhonenkov ₁ , Aidar U. Gaisin ₁ , Nadiia M. Kolomiiets ₂ , Valeri V. Afanas’ev ₂ , Harold F. W. Dekkers ₃

Affiliation

By use of a combination of electrical measurements and internal photoemission interface barrier characterization, the effective workfunction (EWF) changes of nm-thin TiN layer deposited on top of oxide insulators (SiO₂, HfO₂) have been correlated with atomic and chemical composition of the metal/oxide interfaces characterized by photoelectron spectroscopy and X-ray absorption. The major mechanisms of the EWF tuning are shown to be correlated to redistribution of light N and O atoms. Oxygen scavenging from the underlying oxides changes the TiN EWF by forming a Ti oxynitride layer at the interface and introducing charge traps in the near-interface oxide layer. By contrast, significant (≈1 eV) reduction of EWF can be achieved by introduction of a thin TiAl getter layer on top of TiN film. The mechanism of this reduction can be traced to formation of metallic Ti caused by nitrogen scavenging by TiAl as evidenced by AlN formation.

中文翻译：

与HfO ₂和SiO _2的界面上TiN有效功函数调整的机理

通过结合电学测量和内部光发射界面势垒表征，沉积在氧化物绝缘体（SiO ₂，HfO ₂）上的纳米薄膜TiN层的有效功函数（EWF）变化）与通过光电子能谱和X射线吸收表征的金属/氧化物界面的原子和化学组成有关。EWF调节的主要机制显示出与轻质N和O原子的重新分布有关。通过在界面处形成Ti氮氧化物层并在近界面氧化物层中引入电荷陷阱，从下面的氧化物中清除氧气会改变TiN EWF。相比之下，通过在TiN薄膜顶部引入一层薄的TiAl吸气层，可以实现EWF的显着降低（≈1eV）。这种还原的机理可以追溯到由TiAl清除氮引起的金属Ti形成，如AlN形成所证明的。

更新日期：2020-07-16

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