Pattern Stimulated CVD Growth of 2D MoS2,ChemistrySelect

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Pattern Stimulated CVD Growth of 2D MoS2
ChemistrySelect ( IF 1.9 ) Pub Date : 2020-06-12 , DOI: 10.1002/slct.202001683
Zhuhua Xu ₁ , Yanfei Lv ₁ , Jingzhou Li _{2,

3} , Guodan Wei _{2,

3} , Shichao Zhao ₁

Affiliation

Great efforts have been explored to prepare monolayer MoS₂ through chemical vapor deposition (CVD) method. However, there still were many shortages in CVD method. Herein, with the mixture of MoS₂ powders and sodium thiosulfate (Na₂S₂O₃) powders as two precursors, monolayer MoS₂ has been successfully grown at a temperature as low as 500 °C through a convenient pattern stimulated CVD growth method in combination with a pattern transfer process. The triangular, hexagonal and larger‐scale monolayer MoS₂ have been obtained distributing on both sides of the precursor. Our analysis indicates that the thickness and shape of the spatially separated domains are the function of the distance to the patterned precursor, resulting from different concentration of precursors and atomic ratio of Mo : S. The atomic ratio of Mo : S near to 1 : 2 was beneficial to the preparation of larger‐scale monolater MoS₂. The intensity and peak shifting of PL demonstrated the defects and strain in monolayer MoS₂. This facile patterned stimulated growth strategy has paved a pioneering way to obtain high quality 2D materials.

中文翻译：

图案刺激2D MoS2的CVD生长

已经探索了通过化学气相沉积（CVD）方法制备单层MoS _2的巨大努力。但是，CVD法仍然存在很多不足。在这里，以MoS ₂粉末和硫代硫酸钠（Na ₂ S ₂ O ₃）粉末的混合物作为两种前驱体，单层MoS ₂已通过便利的图案激发CVD生长方法在500°C的温度下成功生长。与模式转移过程结合使用。三角形，六边形和更大比例的单层MoS ₂已经获得分布在前体的两侧。我们的分析表明，空间分隔区域的厚度和形状是到图案化前驱体距离的函数，这是由前驱体浓度不同和Mo：S的原子比引起的。Mo：S的原子比接近1：2有助于制备更大尺寸的单分子MoS ₂。PL的强度和峰位移证明了单层MoS ₂的缺陷和应变。这种简便的带图案刺激增长策略为获得高质量2D材料铺平了道路。

更新日期：2020-06-12

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