Amorphous structure materials have isotropic characteristics, which provides open active diffusion channels to facilitate the sodium ion diffusion and transport. In this work, amorphous SnSe quantum dots (~2 nm) anchoring on the nitrogen doped graphene (a-SnSe/rGO) are rational designed by facile one-pot solvothermal synthesis. The amorphous SnSe structure largely suppresses the volume change comes from the tin alloying reaction process, further decreases the particle pulverization. Strong Sn–C, Sn–O–C, and Se–C chemical bonds form between a-SnSe and graphene, guaranteeing rapid electrical transport channels during the sodiation/de-sodiation process. As a result, it presents superior electrochemical reversibility of 397 mA h g⁻¹ at 1 A g⁻¹ after 1400 cycles with 0.014% capacity fading per cycle as sodium ion battery anode. The excellent rate performance and the high proportion of pseudocapacitance contribution for a-SnSe/rGO also make it very suitable for the anode materials for sodium ion capacitor. It exhibits high energy density of 58 Wh k g⁻¹ after 5000 cycles at 1 Ag^-1 in optimized a-SnSe/rGO||AC sodium ion capacitor. The strategy of fabrication of amorphous nanostructure material provides brand new thoughts for development and application of metal chalcogenide in energy storage devices.

非晶结构材料具有各向同性的特性，可提供开放的活性扩散通道，以促进钠离子的扩散和运输。在这项工作中，通过简便的一锅溶剂热合成合理地设计了锚定在氮掺杂石墨烯（a-SnSe / rGO）上的非晶SnSe量子点（〜2 nm）。非晶SnSe结构在很大程度上抑制了锡合金反应过程产生的体积变化，进一步降低了颗粒粉碎。a-SnSe和石墨烯之间形成强的Sn–C，Sn–OC和Se–C化学键，从而确保在增盐/脱盐过程中快速的电传输通道。结果，它在1 A g ^-1下表现出397 mA h g ^-1的优异电化学可逆性1400次循环后，作为钠离子电池阳极，每个循环的容量下降0.014％。a-SnSe / rGO的优异的倍率性能和高比例的拟电容贡献值也使其非常适用于钠离子电容器的负极材料。它表现出的58高能量密度瓦ķ克^-1 1的Ag 5000次循环后^-1在优化的-位SnSe / RGO || AC钠离子电容器。非晶态纳米结构材料的制备策略为金属硫族化物在储能装置中的开发和应用提供了崭新的思路。