ZnSeTe Quantum Dots as an Alternative to InP and Their High-Efficiency Electroluminescence,Chemistry of Materials

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ZnSeTe Quantum Dots as an Alternative to InP and Their High-Efficiency Electroluminescence
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-06-04 , DOI: 10.1021/acs.chemmater.0c01596
Sun-Hyoung Lee ₁ , Chang-Yeol Han ₁ , Seung-Won Song ₁ , Dae-Yeon Jo ₁ , Jung-Ho Jo ₁ , Suk-Young Yoon ₁ , Hyun-Min Kim ₁ , Seungki Hong ₂ , Jun Yeon Hwang ₂ , Heesun Yang ₁

Affiliation

Last decade witnessed great advancement in the photoluminescent (PL) quality of visible III–V InP quantum dots (QDs) toward bright, sharp emissivity. Now, InP QDs hold an unrivaled position in the field of next-generation display devices. In an effort to offer non-Cd green QDs as potential alternatives to InP counterparts, in this work, the first viable synthesis of II–VI ternary ZnSeTe QDs is explored. After successful growth of ZnSeTe alloy cores enabled by a balanced precursor reactivity of anions (i.e., Se and Te), sequential triple shells of ZnSe/ZnSeS/ZnS with stepwise type-I energetic potentials are formed. The resulting heterostructured ZnSeTe/ZnSe/ZnSeS/ZnS QDs produce tunable PL wavelengths of 495–532 nm along with high PL quantum yields (QY) of 68–83%, depending on a Te/Se feed molar ratio used for core synthesis. To further evaluate performance of the present ZnSeTe QDs as electroluminescent (EL) emitters, the first fabrication of a solution-processed, multilayered green QD-light-emitting diode (QLED) by adopting Te/Se = 0.28-based triple-shelled QDs with a PL peak of 520 nm and QY of 80% is demonstrated. This device produces promising EL outcomes up to 18 420 cd/m² in luminance and 7.6% in external quantum efficiency, outperforming most of green InP QLEDs reported to date.

中文翻译：

ZnSeTe量子点可替代InP及其高效电致发光

过去十年见证了可见的III–V InP量子点（QD）的光致发光（PL）质量朝着明亮，清晰的发射率发展。现在，InP QD在下一代显示设备领域中占据着无与伦比的地位。为了提供非镉的绿色量子点作为InP对应物的潜在替代品，在这项工作中，探索了II-VI三元ZnSeTe量子点的第一种可行的合成方法。在通过平衡的阴离子（即Se和Te）的前驱物反应性成功生长ZnSeTe合金核之后，形成具有逐步I型高能势的ZnSe / ZnSeS / ZnS连续三层壳。生成的异质结构ZnSeTe / ZnSe / ZnSeS / ZnS QD产生495-532 nm的可调PL波长，以及68-83％的高PL量子产率（QY），这取决于用于核心合成的Te / Se进料摩尔比。为了进一步评估当前的ZnSeTe量子点作为电致发光（EL）发射器的性能，首先采用Te / Se = 0.28基三层QD来制备溶液处理的多层绿色QD发光二极管（QLED）。 PL峰为520 nm，QY为80％。该设备可产生高达18 420 cd / m的EL效果亮度为²，外部量子效率为7.6％，优于迄今为止报道的大多数绿色InP QLED。

更新日期：2020-07-14

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