Tuning the Mechanical Properties of a Polymer Semiconductor by Modulating Hydrogen Bonding Interactions,Chemistry of Materials

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Tuning the Mechanical Properties of a Polymer Semiconductor by Modulating Hydrogen Bonding Interactions
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-06-01 , DOI: 10.1021/acs.chemmater.0c01437
Yu Zheng _{1,

2} , Minoru Ashizawa _{1,

3} , Song Zhang ₄ , Jiheong Kang _{1,

5} , Shayla Nikzad ₁ , Zhiao Yu _{1,

2} , Yuto Ochiai _{1,

6} , Hung-Chin Wu ₁ , Helen Tran ₁ , Jaewan Mun ₁ , Yu-Qing Zheng ₁ , Jeffrey B.-H. Tok ₁ , Xiaodan Gu ₄ , Zhenan Bao ₁

Affiliation

Conjugation breakers (CBs) with different H-bonding chemistries and linker flexibilities are designed and incorporated into a diketopyrrolopyrrole (DPP)-based conjugated polymer backbone. The effects of H-bonding interactions on polymer semiconductor morphology, mechanical properties, and electrical performance are systematically investigated. We observe that CBs with an H-bonding self-association constant >0.7 or a denser packing tendency are able to induce higher polymer chain aggregation and crystallinity in as-casted thin films, resulting in a higher modulus and crack on-set strain. Additionally, the rDoC (relative degree of crystallinity) of the stretched thin film with the highest crack on-set strain only suffers a small decrease, suggesting the main energy dissipation mechanism is the breakage of H-bonding interactions. By contrast, other less stretchable polymer films dissipate strain energy through the breakage of crystalline domains, indicated by a drastic decrease in rDoC. Furthermore, we evaluate their electrical performances under mechanical strain in fully stretchable field-effect transistors. The polymer with the highest crack on-set strain has the least degradation in mobility as a function of strain. Overall, these observations suggest that we can aptly tune the mechanical properties of a polymer semiconductor by modulating intermolecular interactions, such as H-bonding chemistry and linker flexibility. Such understanding provides molecular design guidelines for future stretchable semiconductors.

中文翻译：

通过调节氢键相互作用来调节聚合物半导体的机械性能

设计具有不同H键化学和接头柔性的共轭破坏剂（CB），并将其掺入基于二酮吡咯并吡咯（DPP）的共轭聚合物主链中。系统地研究了氢键相互作用对聚合物半导体形态，机械性能和电性能的影响。我们观察到具有H键自缔合常数> 0.7或更密集的堆积趋势的CB能够在铸态薄膜中诱导更高的聚合物链聚集和结晶度，从而导致更高的模量和开裂应变。另外，具有最大裂纹开始应变的拉伸薄膜的rDoC（相对结晶度）仅经历很小的下降，这表明主要的能量耗散机制是氢键相互作用的破坏。相比之下，其他拉伸性较差的聚合物薄膜则通过结晶域的破坏来耗散应变能，这表明rDoC的急剧下降。此外，我们评估了它们在完全可拉伸场效应晶体管的机械应变下的电气性能。裂纹起始应变最高的聚合物随应变的迁移率降低最小。总体而言，这些观察结果表明，我们可以通过调节分子间的相互作用（例如H键化学和接头柔性）来适当地调节聚合物半导体的机械性能。这样的理解为未来的可拉伸半导体提供了分子设计指南。我们在完全可拉伸的场效应晶体管中评估其在机械应变下的电性能。裂纹起始应变最高的聚合物随应变的迁移率降低最小。总体而言，这些观察结果表明，我们可以通过调节分子间的相互作用（例如H键化学和接头柔性）来适当地调节聚合物半导体的机械性能。这样的理解为未来的可拉伸半导体提供了分子设计指南。我们在完全可拉伸的场效应晶体管中评估其在机械应变下的电性能。裂纹起始应变最高的聚合物随应变的迁移率降低最小。总体而言，这些观察结果表明，我们可以通过调节分子间的相互作用（例如H键化学和接头柔性）来适当地调节聚合物半导体的机械性能。这样的理解为未来的可拉伸半导体提供了分子设计指南。这些观察结果表明，我们可以通过调节分子间的相互作用（例如H键化学和接头柔性）来适当地调节聚合物半导体的机械性能。这样的理解为未来的可拉伸半导体提供了分子设计指南。这些观察结果表明，我们可以通过调节分子间的相互作用（例如氢键键合化学和接头柔性）来适当地调节聚合物半导体的机械性能。这样的理解为未来的可拉伸半导体提供了分子设计指南。

更新日期：2020-07-14

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