High performance photodetector based on InSe/Cs2XI2Cl2(X=Pb, Sn and Ge) heterostructures,Physical Review Applied

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High performance photodetector based on InSe/Cs2XI2Cl2(X=Pb, Sn and Ge) heterostructures
Physical Review Applied ( IF 3.8 ) Pub Date :
Yu-Feng Ding, Zhuo-Liang Yu, Peng-Bin He, Qiang Wan, Biao Liu, Jun-Liang Yang, Meng-Qiu Cai

Recently, all-inorganic two-dimensional (2D) Ruddlesden-Popper (RP) halide perovskites have drawn much attention due to their excellent stability in ambient air. However, their electronic and optical performance resulting from a wide bandgap and low carrier mobility have hindered their use in photodetectors. To overcome these limitations, in this work, taking advantage of hexagonal indium selenide (InSe) with a high electron mobility, we construct a atomically thin heterostructure. Density functional theory (DFT) calculations of the electronic and optical properties are performed for these heterostructures. The results demonstrate that the photodetection response spectrum of the heterostructures is significantly broadened as the bandgap decreases from 2.17 eV to 0.40 eV for InSe/Cs

_{2}

SnI

_{2}

Cl$_{\mathrm{2\thinspace }}$heterostructure. Moreover, the electron effective mass,

m_{e}^{*}

, is reduced from 1.13 m

_{0}

to 0.41 m$_{0\thinspace }$for InSe/Cs

_{2}

GeI

_{2}

Cl$_{\mathrm{2\thinspace }}$heterostructure. The significant reductions in both the band gap and effective mass are determined to be related to the type-II band alignment, which favors the carrier separation at the interface. The physical mechanisms related to the usage of this material in photodetectors are also discussed. The proposed InSe III-VI semiconductor/all-inorganic 2D RP perovskite Cs

_{2}

_{2}

_{2}

=

Pb, Sn and Ge) heterostructures provide new challenges and opportunities for designing high performance photodetectors. *The corresponding author, Electronic address: {mqcai@hnu.edu.cn} {I.

中文翻译：

基于InSe / Cs2XI2Cl2（X = Pb，Sn和Ge）异质结构的高性能光电探测器

近来，全无机二维（2D）Ruddlesden-Popper（RP）卤化物钙钛矿因其在环境空气中的出色稳定性而备受关注。但是，由于带隙宽和载流子迁移率低而产生的电子和光学性能阻碍了它们在光电探测器中的使用。为了克服这些限制，在这项工作中，我们利用具有高电子迁移率的六方硒化铟（InSe），构造了原子薄的异质结构。对这些异质结构进行电子和光学性质的密度泛函（DFT）计算。结果表明，对于InSe / Cs，当带隙从2.17 eV降低到0.40 eV时，异质结构的光检测响应谱显着加宽