Comprehensive evaluation of through‐silicon via (TSV) reliability often requires deterministic and 3D descriptions of local morphological and statistical features of via formation with the Bosch process. Here, a highly sensitive phase‐contrast X‐ray microtomography approach is presented based on recorrection of abnormal projections, which provides comprehensive and quantitative characterization of TSV etching performance. The key idea is to replace the abnormal projections at specific angles in principles of linear interpolation of neighboring projections, and to distinguish the interface between silicon and air by using phase‐retrieval algorithms. It is demonstrated that such a scheme achieves high accuracy in obtaining the etch profile based on the 3D microstructure of the vias, including diameter, bottom curvature radius, depth and sidewall angle. More importantly, the 3D profile error of the via sidewall and the consistency of parameters among all the vias are achieved and analyzed statistically. The datasets in the results and the 3D microstructure can be applied directly to a reference and model for further finite element analysis. This method is general and has potentially broad applications in 3D integrated circuits.

中文翻译：

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利用相衬X射线显微断层扫描技术全面表征TSV蚀刻性能

全面评估硅通孔（TSV）的可靠性通常需要对Bosch工艺中通孔形成的局部形态和统计特征进行确定性和3D描述。在此，基于异常投影的重新校正，提出了一种高灵敏度的相衬X射线显微照相术，该方法可对TSV蚀刻性能进行全面而定量的表征。关键思想是按照相邻投影的线性内插原理替换特定角度的异常投影，并通过使用相位检索算法来区分硅与空气之间的界面。事实证明，这种方案可基于通孔的3D微观结构（包括直径，底部曲率半径，深度和侧壁角度。更重要的是，实现并统计分析了通孔侧壁的3D轮廓误差和所有通孔之间的参数一致性。结果和3D微结构中的数据集可以直接应用于参考和模型，以进行进一步的有限元分析。该方法是通用的，并且在3D集成电路中具有潜在的广泛应用。