Abstract Low-temperature-processable gate dielectrics with high dielectric constants, low leakage current, and good electrical/mechanical stabilities are largely pursued in diverse electronics including flexible transistors, wearable sensors, integrated logic circuits, and various optoelectronic devices. Here, we report low-temperature photochemically activated gate dielectrics based on a lanthanum oxide-aluminum oxide (La2O3–Al2O3 or LAO) alloy system for a utilization in flexible metal-oxide thin-film transistors (TFTs). With proper alloying of La2O3 and Al2O3 at an optimal ratio, synergetic effects could be achieved from both gate dielectric materials, high dielectric constant and excellent insulating properties. With a La:Al ratio of 2:8, LAO gate dielectrics with high dielectric constant (k = 10.72), low surface roughness (0.517 nm), low leakage current density (1.7 × 10−10 A cm−2 @2 MV cm−1), and high breakdown field (∼4.8 MV cm−1) were achieved. By utilizing the photo-annealed LAO as a gate dielectric, low operating voltage (≤5 V) solution-processed indium-gallium-zinc-oxide (IGZO) TFTs having saturation mobility of 8.5 ± 3.25 cm2 V−1s−1, linear mobility of 10.8 ± 2.03 cm2 V−1s−1, subthreshold slope of 0.228 V dec−1, and on/off ratio of ∼105 are demonstrated. Furthermore, the fabricated IGZO TFTs exhibited negligible hysteresis characteristics (

中文翻译：

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用于低压操作的柔性晶体管的光活化高 k 氧化镧-氧化铝 (La2O3-Al2O3) 合金型栅极电介质

摘要 具有高介电常数、低漏电流和良好电气/机械稳定性的低温可加工栅极电介质在包括柔性晶体管、可穿戴传感器、集成电路和各种光电器件在内的各种电子产品中得到了广泛的追求。在这里，我们报告了基于氧化镧 - 氧化铝（La2O3-Al2O3 或 LAO）合金系统的低温光化学激活栅极电介质，用于柔性金属氧化物薄膜晶体管（TFT）。通过以最佳比例适当地合金化 La2O3 和 Al2O3，可以实现栅极介电材料、高介电常数和优异绝缘性能的协同效应。La:Al 比为 2:8，LAO 栅极电介质具有高介电常数 (k = 10.72)、低表面粗糙度 (0.517 nm)、实现了低漏电流密度（1.7 × 10-10 A cm-2 @2 MV cm-1）和高击穿场（~4.8 MV cm-1）。通过利用光退火 LAO 作为栅极电介质，低工作电压 (≤5 V) 溶液处理的铟镓锌氧化物 (IGZO) TFT 具有 8.5 ± 3.25 cm2 V-1s-1 的饱和迁移率，线性迁移率10.8 ± 2.03 cm2 V-1s-1、0.228 V dec-1 的亚阈值斜率和~105 的开/关比被证明。此外，制造的 IGZO TFT 表现出可忽略不计的滞后特性（03 cm2 V-1s-1、0.228 V dec-1 的亚阈值斜率和~105 的开/关比被证明。此外，制造的 IGZO TFT 表现出可忽略不计的滞后特性（03 cm2 V-1s-1、0.228 V dec-1 的亚阈值斜率和~105 的开/关比被证明。此外，制造的 IGZO TFT 表现出可忽略不计的滞后特性（