Improving the Open-Circuit Voltage of Sn-Based Perovskite Solar Cells by Band Alignment at the Electron Transport Layer/Perovskite Layer Interface.,ACS Applied Materials & Interfaces

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Improving the Open-Circuit Voltage of Sn-Based Perovskite Solar Cells by Band Alignment at the Electron Transport Layer/Perovskite Layer Interface.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-05-19 , DOI: 10.1021/acsami.0c04676
Tomoyasu Yokoyama ₁ , Yu Nishitani ₁ , Yumi Miyamoto ₁ , Shohei Kusumoto ₁ , Ryusuke Uchida ₁ , Taisuke Matsui ₁ , Kenji Kawano ₁ , Takashi Sekiguchi ₁ , Yukihiro Kaneko ₁

Affiliation

Organic–inorganic lead halide perovskites are promising materials for realization of low-cost and high-efficiency solar cells. Because of the toxicity of lead, Sn-based perovskite materials have been developed as alternatives to enable fabrication of Pb-free perovskite solar cells. However, the solar cell performance of Sn-based perovskite solar cells (Sn-PSCs) remains poor because of their large open-circuit voltage (V_OC) loss. Sn-based perovskite materials have lower electron affinities than Pb-based perovskite materials, which result in larger conduction band offset (CBO) values at the interface between the Sn-based perovskite and a conventional electron transport layer (ETL) material such as TiO₂. Herein, the relationship between the V_OC and the CBO in these devices was studied to improve the solar cell performances of Sn-PSCs. It was found that the band offset at the ETL/perovskite layer interface affects the V_OC of the Sn-PSCs significantly but does not affect that of the Pb-PSCs because the Sn-based perovskite material is a p-type semiconductor, unlike the Pb-based perovskite. It was also found that Nb₂O₅ has the CBO that is closest to zero for Sn-based perovskite materials, and the V_OC values of Sn-PSCs that use Nb₂O₅ as their ETL are higher than those of Sn-PSCs using TiO₂ or SnO₂ ETLs. This study indicates that control of the energy alignment at the ETL/perovskite layer interface is an important factor in improving the V_OC values of Sn-PSCs.

中文翻译：

通过电子传输层/钙钛矿层界面处的能带对准提高基于Sn的钙钛矿太阳能电池的开路电压。

有机-无机卤化铅钙钛矿是实现低成本和高效率太阳能电池的有前途的材料。由于铅的毒性，已经开发了锡基钙钛矿材料作为替代材料，以制造无铅钙钛矿太阳能电池。但是，由于锡基钙钛矿太阳能电池（Sn-PSC）的开路电压（V _OC）损耗大，因此其太阳能电池性能仍然很差。Sn基钙钛矿材料的电子亲和力低于Pb基钙钛矿材料，这导致Sn基钙钛矿和常规电子传输层（ETL）材料（如TiO ₂）之间的界面处的导带偏移（CBO）值更大。这里，之间的关系V _OC研究了这些器件中的CBO，以改善Sn-PSC的太阳能电池性能。发现在ETL /钙钛矿层界面处的能带偏移会显着影响Sn-PSC的V _OC，但不会影响Pb-PSC的V _OC，这是因为Sn基钙钛矿材料是p型半导体，与铅基钙钛矿。人们还发现，铌₂ ø ₅具有CBO最接近零为Sn系钙钛矿材料，并且V _OC使用的Nb的Sn-的PSC的值₂ ø ₅作为其ETL比的Sn-的PSC的更高使用TiO ₂或SnO ₂ETL。这项研究表明，控制ETL /钙钛矿层界面处的能量排列是提高Sn-PSC的V _OC值的重要因素。

更新日期：2020-05-19

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