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A Highly Sensitive Single Crystal Perovskite-Graphene Hybrid Vertical Photodetector.
Small ( IF 13.0 ) Pub Date : 2020-05-14 , DOI: 10.1002/smll.202000733 Yuting Zou 1, 2 , Tingting Zou 1, 2 , Chen Zhao 1, 2 , Bin Wang 1, 2 , Jun Xing 1, 2 , Zhi Yu 1 , Jinluo Cheng 1 , Wei Xin 1 , Jianjun Yang 1 , Weili Yu 1 , Huanli Dong 3 , Chunlei Guo 1, 4
Small ( IF 13.0 ) Pub Date : 2020-05-14 , DOI: 10.1002/smll.202000733 Yuting Zou 1, 2 , Tingting Zou 1, 2 , Chen Zhao 1, 2 , Bin Wang 1, 2 , Jun Xing 1, 2 , Zhi Yu 1 , Jinluo Cheng 1 , Wei Xin 1 , Jianjun Yang 1 , Weili Yu 1 , Huanli Dong 3 , Chunlei Guo 1, 4
Affiliation
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Organolead trihalide perovskites have attracted significant attention for optoelectronic applications due to their excellent physical properties in the past decade. Generally, both grain boundaries in perovskite films and the device structure play key roles in determining the device performance, especially for horizontal‐structured device. Here, the first optimized vertical‐structured photodetector with the perovskite single crystal MAPbBr3 as the light absorber and graphene as the transport layer is shown. The hybrid device combines strong photoabsorption characteristics of perovskite and high carrier mobility of flexible graphene, exhibits excellent photoresponse performance with high photoresponsivity (≈1017.1 A W−1) and high photodetectivity (≈2.02 × 1013 Jones) in a low light intensity (0.66 mW cm−2) under the actuations of 3 V bias and laser irradiation at 532 nm. In particular, an ultrahigh photoconductive gain of ≈2.37 × 103 is attained because of fast charge transfer in the graphene and large recombination lifetime in the perovskite single crystal. The vertical architecture combining perovskite crystal with highly conductive graphene offers opportunities to fulfill the synergistic effect of perovskite and 2D materials, is thus promising for developing high‐performance electronic and optoelectronic devices.
中文翻译：
高灵敏度单晶钙钛矿-石墨烯混合垂直光电探测器。
过去十年来，有机卤化三卤化物钙钛矿因其出色的物理性能而在光电应用领域引起了广泛关注。通常，钙钛矿薄膜的晶界和器件结构都在决定器件性能方面起着关键作用，尤其是对于水平结构器件。在这里，显示了第一个优化的垂直结构光电探测器，其中钙钛矿单晶MAPbBr 3作为光吸收剂，石墨烯作为传输层。该混合器件结合了钙钛矿的强光吸收特性和柔性石墨烯的高载流子迁移率，具有出色的光响应性能，高光响应性（≈1017.1AW -1）和高光检测率（≈2.02×10 13）在3 V偏压和532 nm的激光照射下在低光强度（0.66 mW cm -2）下发光。尤其是，由于石墨烯中电荷的快速转移以及钙钛矿单晶中复合寿命的延长，可实现约2.37×10 3的超高光电导增益。钙钛矿晶体与高导电性石墨烯相结合的垂直架构为实现钙钛矿和2D材料的协同效应提供了机会，因此有望开发高性能的电子和光电器件。
更新日期：2020-06-25
中文翻译：
高灵敏度单晶钙钛矿-石墨烯混合垂直光电探测器。
过去十年来，有机卤化三卤化物钙钛矿因其出色的物理性能而在光电应用领域引起了广泛关注。通常，钙钛矿薄膜的晶界和器件结构都在决定器件性能方面起着关键作用，尤其是对于水平结构器件。在这里，显示了第一个优化的垂直结构光电探测器，其中钙钛矿单晶MAPbBr 3作为光吸收剂，石墨烯作为传输层。该混合器件结合了钙钛矿的强光吸收特性和柔性石墨烯的高载流子迁移率，具有出色的光响应性能，高光响应性（≈1017.1AW -1）和高光检测率（≈2.02×10 13）在3 V偏压和532 nm的激光照射下在低光强度（0.66 mW cm -2）下发光。尤其是，由于石墨烯中电荷的快速转移以及钙钛矿单晶中复合寿命的延长，可实现约2.37×10 3的超高光电导增益。钙钛矿晶体与高导电性石墨烯相结合的垂直架构为实现钙钛矿和2D材料的协同效应提供了机会，因此有望开发高性能的电子和光电器件。
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