Anodization for Simplified Processing and Efficient Charge Transport in Vertical Organic Field‐Effect Transistors,Advanced Functional Materials

当前位置： X-MOL 学术 › Adv. Funct. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Anodization for Simplified Processing and Efficient Charge Transport in Vertical Organic Field‐Effect Transistors
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-05-14 , DOI: 10.1002/adfm.202001703
Kyung‐Geun Lim ₁ , Erjuan Guo ₂ , Axel Fischer ₂ , Qian Miao ₃ , Karl Leo ₂ , Hans Kleemann ₂

Affiliation

Vertical organic transistors are an attractive alternative to realize short channel transistors, which are required for powerful electronic devices and flexible electronic circuits operating at high frequencies. Unfortunately, the vertical device architecture comes along with an increased device fabrication complexity, limiting the potential of this technology for application. A new design of vertical organic field‐effect transistors (VOFETs) with superior electrical performance and simplified processing is reported. By using electrochemical oxidized aluminum oxide (AlO_x ) as a pseudo self‐aligned charge‐blocking structure in vertical organic transistors, direct leakage current between the source and drain can be effectively suppressed, enabling VOFETs with very low off‐current levels despite the short channel length. The anodization technique is easy to apply and can be surprisingly used on both n‐type and p‐type organic semiconductor thin films with significant signs of degradation. Hence, the anodization technique enables a simplified process of high‐performance p‐type and n‐type VOFETs, paving the road toward complementary circuits made of vertical transistors.

中文翻译：

阳极氧化可简化垂直有机场效应晶体管中的工艺并实现高效电荷传输

垂直有机晶体管是实现短沟道晶体管的一种有吸引力的替代方法，这是功能强大的电子设备和在高频下工作的柔性电子电路所必需的。不幸的是，垂直设备架构伴随着增加的设备制造复杂性，限制了该技术在应用中的潜力。报告了一种新的垂直有机场效应晶体管（VOFET）设计，该晶体管具有出色的电气性能和简化的处理工艺。通过使用电化学氧化的氧化铝（AlO _x ）作为垂直有机晶体管中的伪自对准电荷阻挡结构，可以有效地抑制源极和漏极之间的直接漏电流，即使沟道长度很短，VOFET的截止电流也非常低。阳极氧化技术易于应用，并且可以令人惊讶地用于具有明显退化迹象的n型和p型有机半导体薄膜。因此，阳极氧化技术可以简化高性能p型和n型VOFET的工艺，为垂直晶体管制成的互补电路铺平了道路。

更新日期：2020-07-02

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文本刊介绍/投稿指南