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Ferrocene on Insulator: Silane Coupling to a SiO2 Surface and Influence on Electrical Transport at a Buried Interface with an Organic Semiconductor Layer.
Langmuir ( IF 3.7 ) Pub Date : 2020-05-14 , DOI: 10.1021/acs.langmuir.0c00515 Takashi Ikeda 1 , Keishiro Tahara 1 , Tomofumi Kadoya 1 , Hiroyuki Tajima 1 , Noriaki Toyoda 2 , Satoshi Yasuno 3 , Yoshiki Ozawa 1 , Masaaki Abe 1
Langmuir ( IF 3.7 ) Pub Date : 2020-05-14 , DOI: 10.1021/acs.langmuir.0c00515 Takashi Ikeda 1 , Keishiro Tahara 1 , Tomofumi Kadoya 1 , Hiroyuki Tajima 1 , Noriaki Toyoda 2 , Satoshi Yasuno 3 , Yoshiki Ozawa 1 , Masaaki Abe 1
Affiliation
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A silane coupling-based procedure for decoration of an insulator surface containing abundant hydroxy groups by constructing redox-active self-assembled monolayers (SAMs) is described. A newly synthesized ferrocene (Fc) derivative containing a triethoxysilyl group designated FcSi was immobilized on SiO2/Si by a simple operation that involved immersing the substrate in a toluene solution of the Fc silane coupling reagent and then rinsing the resulting substrate. X-ray photoelectron spectroscopy (XPS) measurements confirmed that the Fc group was immobilized on SiO2/Si in the Fe(II) state. Cyclic voltammetry measurements showed that the Fc groups were electrically insulated from the Si electrode by the SiO2 layer. The FcSi on SiO2/Si structures were found to serve as a good scaffold for formation of organic semiconductor thin films by vacuum thermal evaporation of C8-BTBT (2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene), which is well-known as an organic field-effect transistor (OFET) material. The X-ray diffraction profile indicated that the conventional standing-up conformation of the C8-BTBT molecules perpendicular to the substrates was maintained in the thin films formed on FcSi@SiO2/Si. Further vacuum thermal evaporation of Au provided an FcSi-based OFET structure with good transfer characteristics. The FcSi-based OFET showed pronounced source-drain current hysteresis between the forward and backward scans. The degree of this hysteresis was varied reversibly via gate bias manipulation, which was presumably accompanied by trapping and detrapping of hole carriers at the Fc-decorated SiO2 surface. These findings provide new insights into application of redox-active SAMs to nonvolatile OFET memories while also creating new interfaces through junctions with functional thin films, in which the underlying redox-active SAMs play supporting roles.
中文翻译：
绝缘体上的二茂铁：硅烷偶联至SiO2表面，并在与有机半导体层的埋入界面中影响电传输。
描述了一种基于硅烷偶联的方法，用于通过构造氧化还原活性的自组装单分子层（SAMs）来装饰包含大量羟基的绝缘子表面。含指定的三乙氧基甲硅烷基团A新合成的二茂铁（Fc）的衍生物FCSI被固定在SiO 2通过简单的操作，涉及将衬底浸在Fc硅烷的甲苯溶液偶联试剂和然后冲洗所得基材/硅。X射线光电子能谱（XPS）测量证实Fc基团以Fe（II）状态固定在SiO 2 / Si上。循环伏安法测量表明，Fc基团通过SiO 2层与Si电极电绝缘。该FCSISiO 2 / Si结构上的碳纳米管被发现是通过真空热蒸发C8-BTBT（2,7-二辛基[1]苯并噻吩并[3,2- b ] [1]苯并噻吩的方法形成有机半导体薄膜的良好支架。），这是众所周知的有机场效应晶体管（OFET）材料。的X射线衍射谱表明，C8-BTBT分子垂直于衬底的常规立起构象保持在形成于所述薄膜FCSI @SiO 2 / Si的。Au的进一步真空热蒸发提供了具有良好转移特性的基于FcSi的OFET结构。该FCSI基于OFET的晶体管在向前和向后扫描之间显示出明显的源漏电流迟滞。该滞后的程度通过栅极偏压操纵可逆地变化，这大概伴随着空穴载体在Fc装饰的SiO 2表面上的俘获和去俘获。这些发现为将氧化还原活性SAM用于非易失性OFET存储器提供了新的见解，同时还通过与功能性薄膜的接合处创建了新的界面，其中潜在的氧化还原活性SAM发挥了辅助作用。
更新日期：2020-05-14
中文翻译：
绝缘体上的二茂铁：硅烷偶联至SiO2表面，并在与有机半导体层的埋入界面中影响电传输。
描述了一种基于硅烷偶联的方法，用于通过构造氧化还原活性的自组装单分子层（SAMs）来装饰包含大量羟基的绝缘子表面。含指定的三乙氧基甲硅烷基团A新合成的二茂铁（Fc）的衍生物FCSI被固定在SiO 2通过简单的操作，涉及将衬底浸在Fc硅烷的甲苯溶液偶联试剂和然后冲洗所得基材/硅。X射线光电子能谱（XPS）测量证实Fc基团以Fe（II）状态固定在SiO 2 / Si上。循环伏安法测量表明，Fc基团通过SiO 2层与Si电极电绝缘。该FCSISiO 2 / Si结构上的碳纳米管被发现是通过真空热蒸发C8-BTBT（2,7-二辛基[1]苯并噻吩并[3,2- b ] [1]苯并噻吩的方法形成有机半导体薄膜的良好支架。），这是众所周知的有机场效应晶体管（OFET）材料。的X射线衍射谱表明，C8-BTBT分子垂直于衬底的常规立起构象保持在形成于所述薄膜FCSI @SiO 2 / Si的。Au的进一步真空热蒸发提供了具有良好转移特性的基于FcSi的OFET结构。该FCSI基于OFET的晶体管在向前和向后扫描之间显示出明显的源漏电流迟滞。该滞后的程度通过栅极偏压操纵可逆地变化，这大概伴随着空穴载体在Fc装饰的SiO 2表面上的俘获和去俘获。这些发现为将氧化还原活性SAM用于非易失性OFET存储器提供了新的见解，同时还通过与功能性薄膜的接合处创建了新的界面，其中潜在的氧化还原活性SAM发挥了辅助作用。
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