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Coupling Hexagonal Boron Nitride Quantum Emitters to Photonic Crystal Cavities.
ACS Nano ( IF 15.8 ) Pub Date : 2020-05-13 , DOI: 10.1021/acsnano.0c01818
Johannes E Fröch 1 , Sejeong Kim 1 , Noah Mendelson 1 , Mehran Kianinia 1 , Milos Toth 1, 2 , Igor Aharonovich 1, 2
ACS Nano ( IF 15.8 ) Pub Date : 2020-05-13 , DOI: 10.1021/acsnano.0c01818
Johannes E Fröch 1 , Sejeong Kim 1 , Noah Mendelson 1 , Mehran Kianinia 1 , Milos Toth 1, 2 , Igor Aharonovich 1, 2
Affiliation
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Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and achieve an experimentally measured quality factor (Q-factor) of 3300 for hBN/Si3N4 hybrid cavities. We observed 6-fold photoluminescence enhancement of an hBN single photon emission at room temperature. Our work will be useful for further development of cavity quantum electrodynamic experiments and on-chip integration of two-dimensional (2D) materials.
中文翻译:
将六角形氮化硼量子发射极耦合至光子晶体腔。
量子光子学技术需要一种可扩展的方法,以将非经典光源与光子谐振器集成在一起,以实现强光限制和增强量子光发射。六方氮化硼(hBN)的点缺陷由于其超亮发射而成为单光子源的领先者。然而,迄今为止,hBN缺陷与光子晶体腔的耦合仍然难以捉摸。在这里,我们展示了hBN量子发射器与氮化硅(Si 3 N 4)的光子晶体腔的片上集成,并实现了hBN / Si 3 N 4的实验测量品质因数(Q系数)3300混合腔。我们观察到在室温下hBN单光子发射的6倍光致发光增强。我们的工作将对腔量子电动力学实验的进一步发展和二维(2D)材料的片上集成有用。
更新日期:2020-06-23
中文翻译:
![](https://scdn.x-mol.com/jcss/images/paperTranslation.png)
将六角形氮化硼量子发射极耦合至光子晶体腔。
量子光子学技术需要一种可扩展的方法,以将非经典光源与光子谐振器集成在一起,以实现强光限制和增强量子光发射。六方氮化硼(hBN)的点缺陷由于其超亮发射而成为单光子源的领先者。然而,迄今为止,hBN缺陷与光子晶体腔的耦合仍然难以捉摸。在这里,我们展示了hBN量子发射器与氮化硅(Si 3 N 4)的光子晶体腔的片上集成,并实现了hBN / Si 3 N 4的实验测量品质因数(Q系数)3300混合腔。我们观察到在室温下hBN单光子发射的6倍光致发光增强。我们的工作将对腔量子电动力学实验的进一步发展和二维(2D)材料的片上集成有用。