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Nanoprobing of MoS2 by Synchrotron Radiation When van der Waals Epitaxy Is Locally Invalid.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-05-13 , DOI: 10.1021/acsami.0c00277
Ling Lee,Shin-Yi Tang,Jyun-Hong Chen,Teng-Yu Su,Hsuan-Chu Chen,Chia-Hsien Lin,Ching-Yu Chiang,Shang-Jui Chiu,Ching-Shun Ku,Ji-Lin Shen,Zhiming M Wang,Yu-Lun Chueh

In this work, we demonstrated nano-scaled Laue diffractions by a focused polychromatic synchrotron radiation beam to discover what happens in MoS2 when van der Waals epitaxy is locally invalid. A stronger exciton recombination with a local charge depletion in the density of 1 × 1013 cm–2, extrapolated by Raman scattering and photoluminescence, occurs in grains, which exhibits a preferred orientation of 30° rotation with respect to the c-plane of a sapphire substrate. Else, the charge doping and trion recombination dominate instead. In addition to the breakthrough in extrapolating mesoscopic crystallographic characteristics, this work opens the feasibility to manipulate charge density by the selection of the substrate-induced disturbances without external treatment and doping. Practically, the 30° rotated orientation in bilayer MoS2 films is promoted on inclined facets in the patterned sapphire substrate, which exhibits a periodic array of charge depletion of about 1.65 × 1013 cm–2. The built-in manipulation of carrier concentrations could be a potential candidate to lateral and large-area electronics based on 2D materials.

中文翻译:

当范德华磊晶局部无效时,通过同步辐射对MoS2进行纳米探测。

在这项工作中,我们演示了通过聚焦的多色同步加速器辐射束进行的纳米级Laue衍射,以发现当范德华外延局部无效时MoS 2中会发生什么。具有在1×10的密度的局部电荷耗尽更强的激子复合13厘米-2,通过拉曼散射和光致发光推断,多发生在晶粒,其表现出30°的旋转的一个优选的取向相对于所述Ç蓝宝石衬底的平面。在其他情况下,电荷掺杂和三重离子重组起主导作用。除了在推断介观晶体学特征方面的突破之外,这项工作还提供了通过选择衬底诱导的干扰而无需外部处理和掺杂来控制电荷密度的可行性。实际上,双层MoS 2薄膜中30°旋转的取向在图案化的蓝宝石衬底中的倾斜小平面上得到了促进,该衬底表现出大约1.65×10 13 cm -2的周期性电荷消耗阵列。载流子浓度的内置操纵可能是基于2D材料的横向和大面积电子设备的潜在候选者。
更新日期:2020-07-15
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