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Pressure Effects on Optoelectronic Properties of CsPbBr3 Nanocrystals
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-05-11 , DOI: 10.1021/acs.jpcc.0c02701 Xiujun Gao 1 , Quan Wang 1 , Ye Zhang 1 , Cuili Cui 1 , Ning Sui 1 , Xiaochun Chi 1 , Hanzhuang Zhang 1 , Qiang Zhou 1 , Yongjun Bao 1 , Yinghui Wang 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-05-11 , DOI: 10.1021/acs.jpcc.0c02701 Xiujun Gao 1 , Quan Wang 1 , Ye Zhang 1 , Cuili Cui 1 , Ning Sui 1 , Xiaochun Chi 1 , Hanzhuang Zhang 1 , Qiang Zhou 1 , Yongjun Bao 1 , Yinghui Wang 1
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The pressure-dependent optoelectronic properties of all-inorganic perovskite CsPbBr3 nanocrystals (NCs) are investigated with steady-state and transient spectroscopy. The steady-state absorption and photoluminescence (PL) spectra under pressure show that CsPbBr3 NCs pass through three electronic states (ES-I, ES-II, and ES-III) separated with two knee points located at 0.38 and 1.08 GPa, respectively, which are also confirmed by the PL dynamics. Analyzed with the two-carrier model of free carriers and trapped carriers, the PL dynamics show that the lifetime increases in ES-I, decreases in ES-II, and increases in ES-III for free carriers, while it is almost invariable for trapped carriers. The transformation from ES-I to ES-II is assigned to the contraction of the Pb–Br bond length while the transformation from ES-II to ES-III originated mostly from the distortion of the PbBr6 octahedron. Apparently, the contraction of the Pb–Br bond and the distortion of octahedra benefit the tailoring of the generation and diffusion of carriers during the CsPbBr3 NCs compression. These results in this work help us to design and optimize the perovskite-based optoelectronic devices of high performance.
中文翻译：
压力对CsPbBr 3纳米晶体光电性能的影响
用稳态和瞬态光谱研究了全无机钙钛矿CsPbBr 3纳米晶体（NC）的压力依赖性光电性能。压力下的稳态吸收和光致发光（PL）光谱表明CsPbBr 3NC通过三个电子状态（ES-I，ES-II和ES-III），两个电子状态分别位于0.38 GPa和1.08 GPa的两个拐点处，这也由PL动力学证实。通过自由载流子和捕获载流子的两载流子模型分析，PL动力学表明，对于自由载流子，ES-I的寿命增加，ES-II减少，ES-III的寿命增加，而对于陷阱，则几乎不变运营商。从ES-I到ES-II的转变被归因于Pb-Br键长的收缩，而从ES-II到ES-III的转变主要起源于PbBr 6八面体的变形。显然，Pb-Br键的收缩和八面体的变形有利于在CsPbBr 3期间定制载流子的产生和扩散NC压缩。这项工作的这些结果有助于我们设计和优化高性能的基于钙钛矿的光电器件。
更新日期：2020-05-11
中文翻译：
压力对CsPbBr 3纳米晶体光电性能的影响
用稳态和瞬态光谱研究了全无机钙钛矿CsPbBr 3纳米晶体（NC）的压力依赖性光电性能。压力下的稳态吸收和光致发光（PL）光谱表明CsPbBr 3NC通过三个电子状态（ES-I，ES-II和ES-III），两个电子状态分别位于0.38 GPa和1.08 GPa的两个拐点处，这也由PL动力学证实。通过自由载流子和捕获载流子的两载流子模型分析，PL动力学表明，对于自由载流子，ES-I的寿命增加，ES-II减少，ES-III的寿命增加，而对于陷阱，则几乎不变运营商。从ES-I到ES-II的转变被归因于Pb-Br键长的收缩，而从ES-II到ES-III的转变主要起源于PbBr 6八面体的变形。显然，Pb-Br键的收缩和八面体的变形有利于在CsPbBr 3期间定制载流子的产生和扩散NC压缩。这项工作的这些结果有助于我们设计和优化高性能的基于钙钛矿的光电器件。
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