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Interlayers for Improved Hole Injection in Organic Field‐Effect Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-05-10 , DOI: 10.1002/aelm.201901352 Ke Zhang 1 , Naresh B. Kotadiya 1 , Xiao‐Ye Wang 2 , Gert‐Jan A. H. Wetzelaer 1 , Tomasz Marszalek 1, 3 , Wojciech Pisula 1, 3 , Paul W. M. Blom 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-05-10 , DOI: 10.1002/aelm.201901352 Ke Zhang 1 , Naresh B. Kotadiya 1 , Xiao‐Ye Wang 2 , Gert‐Jan A. H. Wetzelaer 1 , Tomasz Marszalek 1, 3 , Wojciech Pisula 1, 3 , Paul W. M. Blom 1
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Efficient charge‐carrier injection is a critical requirement for high‐performance organic electronic devices, such as light‐emitting diodes, solar cells, and field‐effect transistors. In this work, a significantly improved charge‐carrier injection from high work‐function metal‐oxide electrodes in organic field effect transistors (OFETs) is demonstrated for amorphous organic semiconductors (OSCs) by using organic interlayers with a high ionization energy (IE). Molybdenum oxide (MoO3) exhibits limited injection into amorphous 2,2′,7,7′‐tetrakis(N ,N ‐diphenylamino)‐9,9‐spirobifluorene (Spiro‐TAD) and tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA) active layers, resulting in high contact resistance and threshold voltage. By inserting an interlayer of a few nanometers thick with high IE between the MoO3 electrode and the amorphous OSC films, the Spiro‐TAD and TCTA OFETs show a substantial enhancement in hole current, subthreshold swing, and effective charge carrier mobility due to the decreased contact resistance. However, for discontinuous interlayers formed on distinct grain domains as in the case of polycrystalline 2,7‐dioctyl[1]benzothieno[3,2‐b ][1]benzothiophene (C8‐BTBT) films, the effect of the interlayer reduces. These results demonstrate that the utilization of smooth interlayers with IE higher than the semiconductor is a general approach to elevate the hole injection into amorphous OSCs with high IE in OFETs.
中文翻译：
改善有机场效应晶体管中空穴注入的中间层
高效载流子注入是高性能有机电子设备的关键要求，例如发光二极管，太阳能电池和场效应晶体管。在这项工作中，通过使用具有高电离能（IE）的有机中间层，证明了用于非晶有机半导体（OSC）的有机场效应晶体管（OFET）中高功能金属氧化物电极的载流子注入得到了显着改善。氧化钼（MoO 3）对非晶态2,2'，7,7'-四（N，N-二苯基氨基）-9,9-螺二芴（Spiro-TAD）和三（4-咔唑基-9-基苯基）胺（TCTA）活性层，导致较高的接触电阻和阈值电压。通过在MoO 3电极和非晶OSC膜之间插入具有高IE的几纳米厚的中间层，Spiro-TAD和TCTA OFETs显着增强了空穴电流，亚阈值摆幅以及有效的载流子迁移率，这是由于降低了接触电阻。但是，对于在不同晶粒域上形成的不连续夹层，如多晶2,7-二辛基[1]苯并噻吩并[3,2- b] [1]苯并噻吩（C8-BTBT）薄膜，中间层的作用降低。这些结果表明，利用IE高于半导体的光滑中间层是提高向OFET中具有高IE的非晶OSC中注入空穴的通用方法。
更新日期：2020-05-10
中文翻译：
改善有机场效应晶体管中空穴注入的中间层
高效载流子注入是高性能有机电子设备的关键要求，例如发光二极管，太阳能电池和场效应晶体管。在这项工作中，通过使用具有高电离能（IE）的有机中间层，证明了用于非晶有机半导体（OSC）的有机场效应晶体管（OFET）中高功能金属氧化物电极的载流子注入得到了显着改善。氧化钼（MoO 3）对非晶态2,2'，7,7'-四（N，N-二苯基氨基）-9,9-螺二芴（Spiro-TAD）和三（4-咔唑基-9-基苯基）胺（TCTA）活性层，导致较高的接触电阻和阈值电压。通过在MoO 3电极和非晶OSC膜之间插入具有高IE的几纳米厚的中间层，Spiro-TAD和TCTA OFETs显着增强了空穴电流，亚阈值摆幅以及有效的载流子迁移率，这是由于降低了接触电阻。但是，对于在不同晶粒域上形成的不连续夹层，如多晶2,7-二辛基[1]苯并噻吩并[3,2- b] [1]苯并噻吩（C8-BTBT）薄膜，中间层的作用降低。这些结果表明，利用IE高于半导体的光滑中间层是提高向OFET中具有高IE的非晶OSC中注入空穴的通用方法。
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