Enhanced Optoelectronic Performance of CVD-Grown Metal-Semiconductor NiTe2/MoS2 Heterostructures.,ACS Applied Materials & Interfaces

当前位置： X-MOL 学术 › ACS Appl. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Enhanced Optoelectronic Performance of CVD-Grown Metal-Semiconductor NiTe2/MoS2 Heterostructures.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-05-06 , DOI: 10.1021/acsami.0c02166
Xiaokun Zhai _{1,

2} , Xing Xu ₁ , Jiangbo Peng _{1,

2} , Fangli Jing _{3,

4} , Qinglin Zhang ₁ , Hongjun Liu _{1,

2,

3} , Zhanggui Hu _{2,

3}

Affiliation

Van der Waals (vdW) heterostructures are the fundamental blocks for two-dimensional (2D) electronic and optoelectronic devices. In this work, a high-quality 2D metal-semiconductor NiTe2/MoS2 heterostructure is prepared by a two-step chemical vapor deposition (CVD) growth. The back-gated field-effect transistors (FETs) and photodetectors based on the heterostructure show enhanced electronic and optoelectronic performance than that of a pristine MoS2 monolayer, owing to the better heterointerface in the former device. Especially, this photodetector based on the metal-semiconductor heterostructure shows 3 orders faster rise time and decay time than that of the pristine MoS2 under the same fabrication procedure. The enhancement of electronic behavior and optoelectronic response by the epitaxial growth of metallic vdW layered materials can provide a new method to improve the performance of optoelectronic devices.

中文翻译：

CVD生长的金属半导体NiTe2 / MoS2异质结构的增强的光电性能。

范德华（vdW）异质结构是二维（2D）电子和光电设备的基本组成部分。在这项工作中，通过两步化学气相沉积（CVD）生长来制备高质量的2D金属半导体NiTe2 / MoS2异质结构。基于异质结构的背栅场效应晶体管（FET）和光电检测器显示出比原始MoS2单层更高的电子和光电性能，这是由于前者的异质界面更好。特别是，在相同的制造步骤下，这种基于金属-半导体异质结构的光电探测器的上升时间和衰减时间比原始MoS2快3倍。

更新日期：2020-05-06

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南