脉冲模式操作在β-Ga2O3溅射生长中的进展,Physica Status Solidi (A) - Applications and Materials Science

当前位置： X-MOL 学术 › Phys. Status Solidi A › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

脉冲模式操作在β-Ga2O3溅射生长中的进展
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-04-06 , DOI: 10.1002/pssa.201901009
Philipp Schurig ₁ , Fabian Michel ₁ , Andreas Beyer ₂ , Kerstin Volz ₂ , Martin Becker ₁ , Angelika Polity ₁ , Peter J. Klar ₁

Affiliation

使用化学计量的Ga ₂ O ₃靶和恒定的氩氧混合气流量，通过脉冲射频（RF）磁控溅射在β蓝宝石衬底上沉积β‐ Ga ₂ O ₃薄膜。脉冲溅射提供了一种克服常规溅射限制的方法。系统地改变参数RF功率和脉冲占空比（PDC），以优化Ga ₂ O ₃薄膜的合成。随后，生成的沉积态（AD）Ga ₂ O ₃分析层的结构和光学性质，并将结果与通过后沉积快速热退火处理的样品的结果进行比较。在此分析的基础上，根据β‐ Ga ₂ O _3的形成来评估工艺参数。发现沉积后的温度处理产生更好的晶体质量。然而，Al ₂ O ₃的强烈相互扩散观察到底物。发现溅射薄膜的光学带隙与RF溅射功率完全无关，但在很大程度上取决于所用的PDC，而层厚度随着这两个生长参数而强烈增加。这些演变与等离子体的能量和离子种类的变化有关。在生长的薄膜和下面的衬底之间的相中发现了除β- Ga ₂ O ₃以外的痕量GaO _x相关相。

"点击查看英文标题和摘要"

Progress in Sputter Growth of β‐Ga2O3 by Applying Pulsed‐Mode Operation

β ‐Ga₂O₃ thin films are deposited by pulsed radio‐frequency (RF) magnetron sputtering on c‐sapphire substrates, using a stoichiometric Ga₂O₃ target and a constant gas flux of an argon–oxygen mixture. Pulsed sputtering offers a way to overcome the restrictions of conventional sputtering. The parameters RF power and pulse duty cycle (PDC) are varied systematically to optimize the synthesis of Ga₂O₃ thin films. Subsequently, the resulting as‐deposited (AD) Ga₂O₃ layers are analyzed in terms of structural and optical properties and the results are compared with those on the samples treated by postdeposition rapid thermal annealing. Based on this analysis, the process parameters are evaluated in terms of β ‐Ga₂O₃ formation. Postdeposition temperature treatments are found to yield a better crystal quality. However, a strong interdiffusion with the Al₂O₃ substrate is observed. The optical bandgap of the sputtered thin films is found to be quite independent of the RF sputtering power but to depend strongly on the PDC used, whereas the layer thickness rather strongly increases with both of those growth parameters. These evolutions are assigned to changes in the energy and ionic species of the plasma. Traces of GaO_x‐related phases in addition to β ‐Ga₂O₃ are found in the interphase between the growing thin films and the underlying substrate.

更新日期：2020-04-06

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文