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Multifunctional MoS2 Transistors with Electrolyte Gel Gating.
Small ( IF 13.0 ) Pub Date : 2020-04-30 , DOI: 10.1002/smll.202000420 Binmin Wu 1, 2, 3 , Xudong Wang 1 , Hongwei Tang 4 , Wei Jiang 1, 3 , Yan Chen 1 , Zhen Wang 1, 3 , Zhuangzhuang Cui 1, 3 , Tie Lin 1 , Hong Shen 1 , Weida Hu 1 , Xiangjian Meng 1 , Wenzhong Bao 4 , Jianlu Wang 1 , Junhao Chu 1, 2, 3
Small ( IF 13.0 ) Pub Date : 2020-04-30 , DOI: 10.1002/smll.202000420 Binmin Wu 1, 2, 3 , Xudong Wang 1 , Hongwei Tang 4 , Wei Jiang 1, 3 , Yan Chen 1 , Zhen Wang 1, 3 , Zhuangzhuang Cui 1, 3 , Tie Lin 1 , Hong Shen 1 , Weida Hu 1 , Xiangjian Meng 1 , Wenzhong Bao 4 , Jianlu Wang 1 , Junhao Chu 1, 2, 3
Affiliation
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MoS2, one of the most valued 2D materials beyond graphene, shows potential for future applications in postsilicon digital electronics and optoelectronics. However, achieving hole transport in MoS2, which is dominated by electron transport, is always a challenge. Here, MoS2 transistors gated by electrolyte gel exhibit the characteristics of hole and electron transport, a high on/off ratio over 105, and a low subthreshold swing below 50 mV per decade. Due to the electrolyte gel, the density of electrons and holes in the MoS2 channel reaches ≈9 × 1013 and 8.85 × 1013 cm−2, respectively. The electrolyte gel‐assisted MoS2 phototransistor exhibits adjustable positive and negative photoconductive effects. Additionally, the MoS2 p–n homojunction diode affected by electrolyte gel shows high performance and a rectification ratio over 107. These results demonstrate that modifying the conductance of MoS2 through electrolyte gel has great potential in highly integrated electronics and optoelectronic photodetectors.
中文翻译：
带有电解质凝胶门控的多功能MoS2晶体管。
MoS 2是除石墨烯之外最有价值的2D材料之一，显示出在后硅数字电子和光电子学中未来应用的潜力。然而，在MoS 2中实现以电子传输为主的空穴传输始终是一个挑战。在此，由电解质凝胶选通的MoS 2晶体管表现出空穴和电子传输的特性，每10倍具有高于10 5的高导通/截止比和低于50 mV的低亚阈值摆幅。由于电解质凝胶，MoS 2通道中的电子和空穴的密度分别达到≈9×10 13和8.85×10 13 cm -2。电解质凝胶辅助的MoS 2光电晶体管表现出可调节的正负光电导效应。此外，受电解质凝胶影响的MoS 2 p–n同质结二极管表现出较高的性能，且整流比超过10 7。这些结果表明，通过电解质凝胶改变MoS 2的电导率在高度集成的电子产品和光电光电探测器中具有巨大潜力。
更新日期：2020-04-30
中文翻译：
带有电解质凝胶门控的多功能MoS2晶体管。
MoS 2是除石墨烯之外最有价值的2D材料之一，显示出在后硅数字电子和光电子学中未来应用的潜力。然而，在MoS 2中实现以电子传输为主的空穴传输始终是一个挑战。在此，由电解质凝胶选通的MoS 2晶体管表现出空穴和电子传输的特性，每10倍具有高于10 5的高导通/截止比和低于50 mV的低亚阈值摆幅。由于电解质凝胶，MoS 2通道中的电子和空穴的密度分别达到≈9×10 13和8.85×10 13 cm -2。电解质凝胶辅助的MoS 2光电晶体管表现出可调节的正负光电导效应。此外，受电解质凝胶影响的MoS 2 p–n同质结二极管表现出较高的性能，且整流比超过10 7。这些结果表明，通过电解质凝胶改变MoS 2的电导率在高度集成的电子产品和光电光电探测器中具有巨大潜力。
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