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Electronic origin of negative thermal expansion in V2OPO4.
Chemical Communications ( IF 4.3 ) Pub Date : 2020-04-30 , DOI: 10.1039/d0cc01920h
Elise Pachoud 1 , James Cumby , Jon Wright , Branimir RaguŽ , Robert Glaum , J Paul Attfield
Chemical Communications ( IF 4.3 ) Pub Date : 2020-04-30 , DOI: 10.1039/d0cc01920h
Elise Pachoud 1 , James Cumby , Jon Wright , Branimir RaguŽ , Robert Glaum , J Paul Attfield
Affiliation
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Negative volume expansion between 620 and 800 K in V2OPO4 is discovered to be of electronic origin due to the charge ordering transition at 605 K. Domain reorientation and coexistence of the low and high temperature phases close to the transition are observed in X-ray diffraction data from single crystals grown by chemical vapour transport.
中文翻译：
V2OPO4中负热膨胀的电子起源。
由于605 K处的电荷有序跃迁，发现V 2 OPO 4中620和800 K之间的负体积膨胀是电子起源的。在X-中观察到畴重取向和接近该跃迁的低温相和高温相共存。来自通过化学气相传输生长的单晶的射线衍射数据。
更新日期：2020-04-30
中文翻译：
V2OPO4中负热膨胀的电子起源。
由于605 K处的电荷有序跃迁，发现V 2 OPO 4中620和800 K之间的负体积膨胀是电子起源的。在X-中观察到畴重取向和接近该跃迁的低温相和高温相共存。来自通过化学气相传输生长的单晶的射线衍射数据。
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