Ultra-High-Responsivity Vertical Nanowire-based Phototransistor under Standing-Wave Plasmon Mode Interaction Induced by Near-Field Circular OLED.,The Journal of Physical Chemistry Letters

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Ultra-High-Responsivity Vertical Nanowire-based Phototransistor under Standing-Wave Plasmon Mode Interaction Induced by Near-Field Circular OLED.
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-05-06 , DOI: 10.1021/acs.jpclett.0c00993
Sheng Bi _{1,

2} , Qikun Li _{1,

2} , Kyeiwaa Asare-Yeboah ₃ , Jin Na _{1,

2} , Yeqing Sun _{1,

2} , Chengming Jiang _{1,

2}

Affiliation

High-responsivity photodevices are strongly desired for various demanding applications, such as optical communications, logic circuits, and sensors. The use of quantum and photon confinement has enabled a true revolution in the development of high-performance devices. Unfortunately, many practical optoelectronic devices exhibit intermediate sizes where resonant enhancement effects seem to be insignificant. Here we design and fabricate an ultra-high-responsivity organic-light-emitting-diode-induced nanowire resonance phototransistor (ONRPT) based on standing-wave resonance in the nanoscale cavity, subjected to a near-field light. Observations of the ONRPT in standing-wave resonance mode indicate a >104 enhancement in the on/off ratio and a six times higher subthreshold slope when compared with the ONRPT in non-resonance mode. The ONRPT, which leads itself to outstanding electrical and favorably stable performance, opens up a plethora of opportunities for high-efficiency energy devices and allows for nanowire applications in the solar cell, piezo-photonic detectors, and optical modulators.

中文翻译：

近场圆形OLED在驻波等离子体模式相互作用下的超高响应垂直纳米线光电晶体管。

对于各种苛刻的应用，例如光通信，逻辑电路和传感器，强烈需要高响应度的光电设备。量子和光子限制的使用已为高性能器件的开发带来了一场真正的革命。不幸的是，许多实际的光电器件表现出中等尺寸，其中共振增强效果似乎微不足道。在这里，我们基于纳米级腔中的驻波共振，设计并制造超高响应度的有机发光二极管诱导的纳米线共振光电晶体管（ONRPT），该晶体管受到近场光的作用。与非共振模式下的ONRPT相比，驻波共振模式下的ONRPT观察表明，开/关比提高了> 104，亚阈值斜率高出六倍。ONRPT，

更新日期：2020-04-30

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